NVMFD5C466NLT1G

NVMFD5C466NLT1G

$2.23
  • Description:MOSFET 2N-CH 40V 14A 8DFN
  • Series:-

SKU:ee9505c778af Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 40V 14A 8DFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:14A (Ta), 52A (Tc)
  • Rds On (Max) @ Id, Vgs:7.4mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs:7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:997pF @ 25V
  • Power - Max:3W (Ta), 40W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
  • Grade:Automotive
  • Qualification:AEC-Q101

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NVMFD5C466NLT1G

Overview

The NVMFD5C466NLT1G is a dual N-channel enhancement mode power MOSFET manufactured by onsemi. It features an SO-8FL (DFN-8) surface-mount package with dimensions of 5x6 mm. The device supports a drain-source voltage (Vds) of 40 V and a gate-source voltage (Vgs) of ±20 V. At TC = 25°C, the continuous drain current (Id) is rated at 52 A, with a maximum power dissipation (Pd) of 46 W. The typical on-resistance (Rds(on)) is 7.4 mΩ at Vgs = 10 V and Id = 26 A. The total gate charge (Qg) is 16 nC at Vgs = 10 V. Operating junction and storage temperatures range from -55°C to +175°C. The component holds AEC-Q101 qualification.

Feature Summary

  • Dual configuration integrates two independent N-channel MOSFETs within a compact footprint for space-constrained designs.
  • AEC-Q101 qualified status ensures reliability and compliance with automotive electronics standards.
  • Low thermal resistance and high current capability facilitate efficient heat dissipation in power management applications.

Applications

  • Automotive power distribution systems
  • DC-DC converter circuits
  • Motor control interfaces

Procurement Notes

Verify the specific suffix LT1G against the manufacturer's latest datasheet to confirm package type and tape-and-reel specifications. Ensure the ordering part number matches the required dual-channel configuration and lead-free RoHS compliance requirements before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel topology is required within a 5x6 mm DFN package. The 40V rating and 52A current capacity suit low-voltage automotive and industrial switching applications. Verify that the 7.4mΩ on-resistance meets the system's conduction loss targets under the intended operating temperature conditions.

Part Context

This part belongs to the NVMFD5C466N series of dual MOSFETs from onsemi. It shares the same die and electrical characteristics as the single-channel variant NVMFS5C466N but provides two channels in one package. The series is designed for automotive-grade performance with PPAP capability.

Replacement Considerations

Direct pin-compatible alternatives within the same series include NVMFD5C466NT1G. Cross-model replacements require verification of Rds(on), Qg, and package dimensions to ensure circuit compatibility.

NVMFD5C466NLT1GNVMFD5C466NLT1G
$2.23
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