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The NVMFD5C466NLT1G is a dual N-channel enhancement mode power MOSFET manufactured by onsemi. It features an SO-8FL (DFN-8) surface-mount package with dimensions of 5x6 mm. The device supports a drain-source voltage (Vds) of 40 V and a gate-source voltage (Vgs) of ±20 V. At TC = 25°C, the continuous drain current (Id) is rated at 52 A, with a maximum power dissipation (Pd) of 46 W. The typical on-resistance (Rds(on)) is 7.4 mΩ at Vgs = 10 V and Id = 26 A. The total gate charge (Qg) is 16 nC at Vgs = 10 V. Operating junction and storage temperatures range from -55°C to +175°C. The component holds AEC-Q101 qualification.
Verify the specific suffix LT1G against the manufacturer's latest datasheet to confirm package type and tape-and-reel specifications. Ensure the ordering part number matches the required dual-channel configuration and lead-free RoHS compliance requirements before finalizing procurement orders.
Select this component when a dual N-channel topology is required within a 5x6 mm DFN package. The 40V rating and 52A current capacity suit low-voltage automotive and industrial switching applications. Verify that the 7.4mΩ on-resistance meets the system's conduction loss targets under the intended operating temperature conditions.
This part belongs to the NVMFD5C466N series of dual MOSFETs from onsemi. It shares the same die and electrical characteristics as the single-channel variant NVMFS5C466N but provides two channels in one package. The series is designed for automotive-grade performance with PPAP capability.
Direct pin-compatible alternatives within the same series include NVMFD5C466NT1G. Cross-model replacements require verification of Rds(on), Qg, and package dimensions to ensure circuit compatibility.