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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 14A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta), 49A (Tc)
- Rds On (Max) @ Id, Vgs：8.1mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：650pF @ 25V
- Power - Max：3W (Ta), 38W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The NVMFD5C466NWFT1G is a dual N-channel power MOSFET manufactured by onsemi. It features a 40V drain-source voltage rating and supports a continuous drain current of 52A at case temperature. The device exhibits a maximum on-resistance of 7.4 milliohms at 10V gate drive. Packaged in an SO-8FL (DFN-8) surface-mount format with wettable flanks, it operates within a junction temperature range of -55°C to +175°C. The component holds AEC-Q101 automotive qualification and includes a total gate charge of 16nC.
Feature Summary
- Dual N-channel configuration for compact circuit design
- Wettable flank package design facilitates optical solder joint inspection
- Automotive-grade reliability certified under AEC-Q101 standards
Applications
- Automotive power management systems
- Motor control applications
- DC-DC converter circuits
Procurement Notes
Verify the specific suffix WFT1G against official datasheets to confirm the inclusion of wettable flanks and tape-and-reel packaging. Ensure compatibility with automated optical inspection requirements due to the flank design. Confirm RoHS compliance status through manufacturer declarations prior to integration into regulated assemblies.
Selection Notes
Select this component when space-constrained automotive designs require dual N-channel isolation. The 40V rating suits low-voltage DC systems. Evaluate thermal performance based on the 7.4mΩ resistance and DFN-8 heat dissipation capabilities. Verify that the 16nC gate charge aligns with available driver output currents for optimal switching efficiency.
Part Context
This part belongs to the NVMFD5C466N series from onsemi, designed for high-efficiency power switching. It shares the 40V, ~7mΩ electrical profile with variants like NVMFD5C466NL but differs in package termination style. The series targets automotive and industrial sectors demanding robust, small-footprint solutions.
Replacement Considerations
Direct substitutes include NVMFD5C466NL for standard DFN-8 packages without flanks. For identical wettable flank specifications, verify availability of NVMFD5C466NLWFT1G. Cross-reference pinouts and thermal characteristics before substitution.
