NVMFD5C470NLT1G

$1.38

Description：MOSFET 2N-CH 40V 11A 8DFN
Series：-

SKU:41912239ee67 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 11A 8DFN
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：11A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs：11.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs：4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：590pF @ 25V
Power - Max：3W (Ta), 24W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade：Automotive
Qualification：AEC-Q101

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NVMFD5C470NLT1G

Overview

The NVMFD5C470NLT1G is a dual N-channel enhancement mode power MOSFET manufactured by onsemi. It features a SO-8FL-Dual-8 surface-mount package with two independent channels. Key electrical specifications include a drain-source breakdown voltage (Vds) of 40 V and a continuous drain current (Id) of 36 A at case temperature. The device exhibits a maximum on-resistance (Rds On) of 9.2 mΩ per channel. Gate-source voltage limits are ±20 V, with a threshold voltage (Vgs th) of 1.2 V and total gate charge (Qg) of 9 nC. Thermal performance includes a power dissipation (Pd) of 24 W and an operating junction temperature range from -55°C to +175°C. The component holds AEC-Q101 automotive qualification.

Feature Summary

Dual N-channel configuration in a compact surface-mount package for space-constrained designs
Low on-resistance characteristics to minimize conduction losses and improve efficiency
Automotive-grade reliability certified under AEC-Q101 standards
Enhanced optical inspection capability through available wettable flanks design option

Applications

Automotive electronic control units requiring high reliability
Compact power conversion modules
High-density circuit board designs

Procurement Notes

Verify the specific ordering suffix to confirm package variations such as wettable flanks. Confirm availability status as the part may be subject to lifecycle changes. Ensure compatibility with existing PCB footprints and thermal management requirements before integration into production systems.

Selection Notes

Select this component for applications demanding low voltage operation with high current handling capabilities. Evaluate thermal resistance values against system heat dissipation constraints. Consider the gate charge parameters when designing driver circuits for switching frequency optimization.

Part Context

This device belongs to the NVMFD5C470NL series of dual MOSFETs. It shares family characteristics with other variants in the lineup but differs in specific electrical ratings and packaging options. The series targets automotive and industrial markets requiring robust power switching solutions.