NVMFD5C470NLWFT1G

Overview

The NVMFD5C470NLWFT1G is a dual N-channel enhancement mode MOSFET from onsemi, housed in an 8-lead DFN-8 (SO8FL) surface-mount package. It features a 40V drain-source breakdown voltage and a maximum continuous drain current of 36A at case temperature. The device exhibits a low on-resistance of 11.5 mΩ, facilitating efficient power switching with minimal conduction losses. Key electrical parameters include a gate charge of 9 nC, a threshold voltage of 2.2 V, and a maximum power dissipation of 46 W. Operating temperatures range from -55°C to +175°C junction temperature.

Feature Summary

• Dual N-channel configuration within a compact 5x6 mm DFN-8 footprint for space-constrained designs.
• Low on-resistance and gate charge characteristics designed to minimize conduction and switching losses.
• Available in versions with wettable flanks to enhance optical inspection capabilities during manufacturing.
• Automotive-grade reliability certified under AEC-Q101 standards with PPAP capability.

Applications

• Power conversion circuits requiring high efficiency and small form factors.
• Automotive electronic control units and power distribution systems.
• High-density portable consumer electronics and battery-powered devices.
• DC-DC converter topologies utilizing synchronous rectification.

Procurement Notes

Verify the specific suffix against the manufacturer's datasheet to confirm package variations such as wettable flanks. Ensure component authenticity through authorized channels to guarantee compliance with automotive quality standards. Confirm RoHS and lead-free status requirements match the project specifications before finalizing orders.

Selection Notes

Select this component when a 40V rating suffices for the application voltage headroom. The dual channel architecture allows for cost-effective implementation of half-bridge or synchronous buck configurations. Evaluate thermal management needs based on the 46W power dissipation rating and ensure adequate PCB copper area for heat spreading.

Part Context

This part belongs to the NVMFD5C series of low-voltage power MOSFETs optimized for high-current applications. The series utilizes advanced silicon technology to achieve low RDS(on) within a standard SO8FL outline. It serves as a direct replacement for legacy components in similar voltage classes while offering improved switching performance.

Replacement Considerations

Direct substitutes within the same family include NVMFD5C470N variants with different packaging options. Cross-reference pinouts and thermal pad dimensions when replacing with components from other manufacturers to ensure mechanical compatibility.