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The NVMFD5C470NWFT1G is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It features a 40V drain-source breakdown voltage and a maximum continuous drain current of 36A at 25°C case temperature. The device offers a low on-resistance of 11.5mΩ, facilitating efficient power switching with minimal conduction losses. Packaged in an 8-lead DFN (DFN8 5x6) surface-mount configuration, it supports high-density PCB layouts. Key electrical parameters include a gate-source threshold voltage of 2.2V, total gate charge of 9nC, and a maximum power dissipation of 46W. The component operates within a junction temperature range of -55°C to +175°C.
Verify the specific suffix 'WF' against the manufacturer datasheet to confirm the presence of solderable wings for optical inspection. Ensure the ordering part number matches the exact package variant required for your assembly process. Cross-reference the RoHS compliance status with current regulatory requirements before finalizing procurement orders.
Select this component when a dual N-channel MOSFET with 40V rating and approximately 11.5mΩ on-resistance is needed. The DFN8 package is suitable for applications requiring small form factors. Verify that the 36A current rating meets the peak load requirements of the target application under expected thermal conditions.
This device belongs to the NVMFD5C470N series of dual N-channel power MOSFETs from onsemi. The series is designed for high-efficiency power conversion applications. The 'WF' suffix typically denotes a package variant with solderable side walls, distinct from standard DFN packages without this feature.
Direct replacements must match the 40V Vds, ~11.5mΩ Rds(on), and DFN8 package dimensions. Check equivalent parts from other manufacturers for compatible pinouts and thermal characteristics.