ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 9.8A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：9.8A (Ta), 27A (Tc)
- Rds On (Max) @ Id, Vgs：17mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs：6.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：325pF @ 25V
- Power - Max：3.1W (Ta), 23W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：Automotive
- Qualification：AEC-Q101
Download product information
Overview
The onsemi NVMFD5C478NT1G is a dual N-channel enhancement mode power MOSFET designed for surface-mount applications. It features a DFN-8 (SO-8FL) package with dimensions of 5.1 mm in length and 1.05 mm in height. The device supports a maximum drain-source voltage (Vds) of 40 V and a continuous drain current (Id) of 29 A. Key electrical parameters include a maximum on-resistance (Rds(on)) of 14.5 mΩ, a typical gate charge (Qg) of 6.3 nC at the specified test conditions, and a forward voltage (Vf) of 0.84 V. It operates within a temperature range of -55°C to +175°C and has a maximum power dissipation (Pd) of 23 W.
Feature Summary
- Dual N-channel configuration integrated into a compact surface-mount package.
- Low on-resistance design to minimize conduction losses.
- AEC-Q101 qualified for automotive reliability standards.
Applications
- Automotive electronic control units
- DC-DC converter circuits
- Power management modules
Procurement Notes
Verify the specific suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and check for any recent production discontinuation notices from the manufacturer before finalizing procurement plans.
Selection Notes
Select this component when a dual N-channel MOSFET with 40 V rating and low Rds(on) is required in a small footprint. Ensure the thermal design accommodates the 23 W power dissipation limit under expected operating conditions and ambient temperatures.
Part Context
This part belongs to the NVMFD5C series of dual MOSFETs from onsemi. It shares the same 5x6 mm DFN-8 form factor as other members like the NVMFD5C462N and NVMFD5C466N, offering a standardized solution for space-constrained designs requiring dual channel functionality.
Replacement Considerations
The NVMFD5C466NT1G is a confirmed substitute within the same family, sharing the 40 V rating and DFN-8 package. Verify that its 14 mΩ Rds(on) and 14 A current rating meet the specific application requirements compared to the 29 A capability of the NVMFD5C478NT1G.
