NVMFD5C650NLWFT1G

Overview

The onsemi NVMFD5C650NLWFT1G is a dual N-channel enhancement-mode MOSFET in the NVMFD5C650NL series. It features a DFN surface-mount package with 8 pins, measuring 6.1mm in length and 1.05mm in height. The device supports a maximum drain-source voltage of 60V and a continuous drain current of 111A. Key electrical parameters include a maximum drain-source resistance of 5.8mΩ, a typical gate charge of 16nC at specified Vgs, and a forward voltage of 0.9V. It operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 125W.

Feature Summary

• Dual N-channel configuration for space-efficient circuit designs
• Low on-resistance and gate charge characteristics for reduced conduction and switching losses
• Wettable flanks option facilitating optical inspection during assembly
• Automotive-grade reliability with AEC-Q101 certification

Applications

• Automotive electronics requiring high reliability and compact form factors
• High-efficiency power conversion systems
• Battery-powered devices where energy conservation is critical

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm that the specific suffix WFT1G corresponds to the required reel packaging format. Ensure compliance with RoHS standards and check for any recent production change notices affecting the part number before finalizing procurement decisions.

Selection Notes

Select this component when designing circuits necessitating a dual N-channel MOSFET with a 60V rating and low thermal impedance. The 8-DFN package suits applications with strict PCB area constraints. Evaluate the 5.8mΩ Rds(on) against load requirements to ensure adequate efficiency. Consider the AEC-Q101 qualification if the target application involves automotive environments.

Part Context

This part belongs to the NVMFD5C650NL series from onsemi, which focuses on high-performance power management solutions. The series utilizes advanced silicon technology to achieve low on-resistance within a small footprint. The dual configuration allows for synchronized switching operations, commonly used in half-bridge or synchronous rectifier topologies.

Replacement Considerations

Direct substitutes within the same series include NVMFD5C668NLWFT1G and NVMFD5C672NLWFT1G. These alternatives share the 60V rating and 8-pin DFN package but differ in current handling and on-resistance specifications. Verify pinout compatibility and thermal performance before substitution.