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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 15.5A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：15.5A (Ta), 68A (Tc)
- Rds On (Max) @ Id, Vgs：6.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：21.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1440pF @ 25V
- Power - Max：3W (Ta), 57.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The NVMFD5C668NLT1G is a dual N-channel enhancement mode power MOSFET manufactured by onsemi. It features a SO-8FL-Dual-8 surface-mount package and utilizes silicon technology. Key electrical specifications include a drain-source breakdown voltage (Vds) of 60 V, a continuous drain current (Id) of 68 A, and a maximum on-resistance (Rds On) of 6.5 mOhms. The device operates with a gate-source voltage range of -20 V to +20 V and has a typical gate charge (Qg) of 21.3 nC. It supports a junction temperature range from -55°C to +175°C and offers a power dissipation rating of 57.5 W. The component holds AEC-Q101 qualification for automotive applications.
Feature Summary
- Dual N-channel configuration in a compact SO-8FL package
- Low on-resistance for efficient power switching
- Automotive-grade reliability with AEC-Q101 certification
Applications
- Automotive power distribution systems
- High-current DC-DC converter circuits
- Motor control applications requiring dual channel isolation
Procurement Notes
Verify the specific ordering suffix and tape/reel specifications against the official manufacturer datasheet before procurement. Confirm that the AEC-Q101 qualification status meets the target application's reliability requirements. Ensure the SO-8FL-Dual-8 footprint matches the design layout. Check for any recent product change notices regarding material composition or manufacturing location changes.
Selection Notes
Select this component when a dual N-channel MOSFET with high current capability and low on-resistance is required in a small outline package. The 60V rating suits medium-voltage automotive and industrial applications. Consider the thermal performance and power dissipation limits relative to the expected operating environment. Verify compatibility with standard gate drive voltages given the threshold characteristics.
Part Context
This part belongs to the NVMFD5C668NL series of dual MOSFETs from onsemi. It shares the SO-8FL-Dual-8 package form factor with other devices in the family but differs in electrical ratings such as current handling and on-resistance. The series is designed for applications demanding high efficiency and compact board space.
Replacement Considerations
Direct substitutes within the same series include parts with identical pinouts and similar electrical parameters. Verify that any replacement maintains the 60V Vds rating and comparable Rds On values. Ensure the alternative component also holds necessary automotive certifications if used in qualified designs.
