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The NVMFD5C668NLWFT1G is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It features a 60V drain-source voltage rating and operates in the SO-8FL-Dual-8 surface-mount package. The device supports a continuous drain current of 15.5A at ambient temperature and 68A at case temperature, with a maximum power dissipation of 3W at ambient and 57.5W at case temperature. Key electrical parameters include a maximum on-resistance of 6.5mΩ at 20A and 10V, a gate charge of 21.3nC at 10V, and an input capacitance of 1440pF at 25V. It meets AEC-Q101 automotive qualification standards.
Verify the complete part number including the suffix to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets specific automotive quality requirements if used in safety-critical systems. Check for RoHS compliance status during sourcing. Ensure storage conditions align with moisture sensitivity level requirements before assembly.
Select this component when a dual N-channel MOSFET with low on-resistance is required in a compact SO-8FL package. Consider the thermal performance limits at both ambient and case temperatures. Evaluate the gate charge and input capacitance values against the driving circuit capabilities to ensure efficient switching speeds.
This component belongs to the NVMFD5C668NL series from onsemi. It is designed as a high-performance power switch alternative to traditional discrete solutions. The series targets applications requiring robust automotive-grade components in small form factors.
Direct substitutes within the same series may offer similar electrical characteristics but different current ratings or package variations. Verify pin compatibility and thermal resistance values before substitution.