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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 12A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta), 49A (Tc)
- Rds On (Max) @ Id, Vgs：11.9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs：5.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：793pF @ 25V
- Power - Max：3.1W (Ta), 45W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The onsemi NVMFD5C672NLWFT1G is a dual N-channel enhancement mode MOSFET in the NVMFD5C650NL series. It features a 60V drain-source voltage (Vdss) and an 8-pin PowerTDFN package with dimensions of 5x6mm. The device supports a continuous drain current of 49A at case temperature and 12A at ambient temperature. Maximum on-resistance (Rds(on)) is 11.9mΩ at Vgs=10V and Id=10A. Gate charge (Qg) is 5.7nC at Vgs=4.5V, with input capacitance (Ciss) of 793pF at Vds=25V. Operating junction temperature ranges from -55°C to 175°C, with power dissipation rated at 45W (case) and 3.1W (ambient).
Feature Summary
- Dual N-channel configuration within a compact 5x6mm surface-mount footprint.
- Low on-resistance design minimizes conduction losses for improved efficiency.
- Optimized gate charge and capacitance reduce switching energy and drive requirements.
- Automotive-grade reliability certified under AEC-Q101 standards.
Applications
- Automotive power distribution systems requiring high reliability.
- High-density DC-DC converter designs utilizing low-profile packaging.
- Motor control circuits benefiting from dual-channel integration.
Procurement Notes
Verify the complete part number including suffixes such as WFT1G against official datasheets to ensure correct packaging and tape-and-reel specifications. Confirm AEC-Q101 certification status if automotive compliance is required. Check RoHS and REACH declarations for environmental compliance before procurement.
Selection Notes
Select this component when space constraints necessitate a small DFN package alongside high current handling capabilities. Evaluate thermal management strategies carefully due to the limited thermal mass of the 5x6mm footprint. Ensure gate driver voltage aligns with the specified Rds(on) test conditions for optimal performance.
Part Context
This device belongs to the NVMFD5C650NL family, which includes variants like NVMFD5C674NL and NVMFD5C650NL. These parts share similar packaging and voltage ratings but differ in current capacity and on-resistance values. The family targets automotive and industrial applications demanding robust surface-mount solutions.
Replacement Considerations
Direct substitutes include other onsemi dual N-channel MOSFETs in the same series with compatible pinouts. Verify that alternative parts meet the specific Rds(on) and Qg requirements for the target application circuit.
