NVMFD5C680NLT1G

Overview

The NVMFD5C680NLT1G is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It features a 60 V drain-source breakdown voltage and a continuous drain current of 26 A at case temperature. The device exhibits a maximum on-resistance of 28 mΩ at 10 V gate drive. It operates within a junction temperature range of -55 °C to +175 °C and supports a power dissipation of 19 W at case temperature. The component is housed in an SO-8FL-Dual-8 package, equivalent to an 8-PowerTDFN footprint.

Feature Summary

• Dual configuration integrating two independent N-channel MOSFETs within a compact surface-mount package for space-constrained designs.
• Automotive-grade reliability certified under AEC-Q101 standards with production part approval program capability.
• Enhanced thermal performance through a low-profile PowerTDFN package design optimized for efficient heat dissipation.

Applications

• Automotive power distribution systems requiring high current handling and robust switching capabilities.
• On-board charger circuits in electric and hybrid vehicles for efficient DC-AC conversion.
• High-density motor control applications utilizing the dual channel architecture for bridge configurations.

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm package variant and tape-and-reel specifications. Ensure compliance with RoHS directives and REACH SVHC requirements prior to integration. Confirm that the selected packaging format aligns with automated assembly equipment constraints and storage conditions defined in the datasheet.

Selection Notes

Select this component when a dual N-channel topology is required within a limited board area. The 60 V rating suits low-voltage automotive architectures. Evaluate thermal management strategies carefully as the 19 W dissipation limit depends on effective heatsinking. Compare gate charge characteristics against driver capabilities to ensure optimal switching speeds and minimize transition losses during operation.

Part Context

This device belongs to the NVMFD5C680NL series of dual MOSFETs from onsemi. It shares the SO-8FL-Dual-8 form factor with other members of the family but differs in electrical parameters such as on-resistance and current capacity. The series targets automotive applications demanding high reliability and compact footprints.

Replacement Considerations

Direct substitutes include NVMFD5C668NLT1G and NVMFD5C674NLWFT1G. Verify pin compatibility and electrical ratings before substitution. Ensure the alternative device meets the same AEC-Q101 certification and package dimensions to maintain mechanical fit.