NVMFS3D6N10MCLT1G

$3.23

Description：MOSFET N-CH 100V 19A/132A 5DFN
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a997af419f38 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

NVMFS3D6N10MCLT1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 100V 19A/132A 5DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NVMFS3D6N10MCLT1G

Description：MOSFET N-CH 100V 19A/132A 5DFN
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：19A (Ta), 132A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.6mOhm @ 48A, 10V
Vgs(th) (Max) @ Id：3V @ 270µA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4411 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：3W (Ta), 139W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：5-DFN (5x6) (8-SOFL)
Package / Case：8-PowerTDFN, 5 Leads

Single FETs, MOSFETs datasheet and documents for NVMFS3D6N10MCLT1G

NVMFS3D6N10MCLT1G

Single FETs, MOSFETs Overview

The NVMFS3D6N10MCLT1G is a single-channel N-channel enhancement mode MOSFET from onsemi, designed for automotive applications. It features a 100 V drain-source voltage (Vdss) and operates with a continuous drain current of 20 A at ambient temperature or 132 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 3.6 mΩ at 10 V gate drive. It utilizes an 8-PowerTDFN package (5x6 mm footprint). Key electrical parameters include a gate charge of 60 nC and an input capacitance of 4411 pF. The component supports a junction temperature range from -55°C to +175°C and holds AEC-Q101 qualification.

Single FETs, MOSFETs Feature Summary

AEC-Q101 qualified for automotive reliability standards
Low on-resistance for efficient power handling
Enhanced thermal performance via PowerTDFN packaging

Single FETs, MOSFETs Applications

Automotive power management systems
High-current DC-DC converter circuits
Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'LT1G' against the manufacturer's latest datasheet to confirm package and tape specifications. Ensure the ordering part number matches the required automotive grade certification. Cross-reference the AEC-Q101 status directly with official documentation before integration into safety-critical designs.

Single FETs, MOSFETs Selection Notes

Select this component when a low-profile surface-mount solution is required for high-current automotive environments. The 3.6 mΩ on-resistance offers a balance between conduction loss and switching speed. Consider the 5x6 mm footprint constraints and verify that the thermal dissipation requirements align with the PowerTDFN package capabilities under your specific operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the NVMFS3D6N10MCL series of low-loss N-channel MOSFETs. It is engineered specifically for the automotive market, providing robust performance in harsh environments. The series emphasizes compact form factors combined with high current carrying capacity, addressing the increasing demand for miniaturization in modern vehicle electronics.