NVMFS6H836NLWFT1G

Single FETs, MOSFETs Overview

The NVMFS6H836NLWFT1G is a single N-channel power MOSFET from onsemi, housed in a compact DFNW5 (SO-8FL) package measuring 5x6 mm. It features a drain-to-source voltage of 80 V and a maximum continuous drain current of 77 A at TC = 25°C. The device exhibits a low on-resistance of 6.2 mΩ at VGS = 10 V and 7.8 mΩ at VGS = 4.5 V. Key electrical characteristics include a total gate charge of 34 nC at VGS = 10 V and an input capacitance of 1950 pF. It supports a pulsed drain current of 449 A and operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Small footprint design suitable for space-constrained applications
• Low on-resistance minimizes conduction losses
• Low gate charge and capacitance reduce driver losses
• Wettable flank option enhances optical inspection reliability

Single FETs, MOSFETs Applications

• Automotive electronics requiring AEC-Q101 qualification
• Power management systems with high efficiency demands
• Compact electronic designs needing reduced thermal resistance

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'WF' indicates the wettable flank variant when sourcing this component. Confirm that the tape and reel packaging specifications align with automated assembly requirements. Ensure compliance with RoHS and halide-free standards as documented in the datasheet. Cross-reference the marking code '836LWF' to validate authenticity upon receipt.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling in a small surface-mount package. Consider the 80 V rating and low RDS(on) for efficient power switching. Evaluate thermal performance based on the specified junction-to-case resistance. Verify compatibility with gate drive voltages given the threshold characteristics.

Single FETs, MOSFETs Part Context

This part belongs to the NVMFS6H series of single N-channel MOSFETs designed for automotive and industrial use. It utilizes silicon technology and offers enhanced reliability through PPAP capability. The DFNW5 package provides improved solder joint visibility compared to standard variants.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the NVMFS6H series offering similar voltage and current ratings. Verify pinout compatibility and thermal resistance values before substitution. Ensure any replacement also meets AEC-Q101 qualifications if used in automotive contexts.