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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 11.6A 8DFN
- Series：-
- Mfr：onsemi
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：11.6A (Ta), 61A (Tc)
- Rds On (Max) @ Id, Vgs：10.4mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id：3V @ 97µA
- Gate Charge (Qg) (Max) @ Vgs：26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1800pF @ 50V
- Power - Max：3.1W (Ta), 84W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The onsemi NVMFWD010N10MCLT1G is a dual N-channel power MOSFET designed for automotive applications. It features a 100V drain-source voltage rating and a low on-resistance of 10mΩ at VGS=10V. The device supports a continuous drain current of 48A at TC=25°C and handles up to 96A at TC=100°C. Packaged in an SO-8FL (DFN-8) surface-mount case, it offers high thermal performance with a maximum power dissipation of 78W at TC=25°C. The component is AEC-Q101 qualified and operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Dual N-channel configuration integrated into a compact surface-mount package
- Low on-resistance for efficient power switching and reduced conduction losses
- Automotive-grade reliability with AEC-Q101 qualification
- Extended operating temperature range suitable for harsh environments
Applications
- Automotive power distribution systems
- High-side or low-side load switch circuits
- DC-DC converter output stages
- Motor control interfaces
Procurement Notes
Verify the specific suffix T1G against official onsemi documentation to confirm tape-and-reel packaging specifications. Ensure that the SO-8FL footprint matches your PCB design guidelines. Confirm AEC-Q101 compliance requirements for your target automotive application tier before finalizing component selection.
Selection Notes
Select this component when a dual MOSFET solution is required for space-constrained automotive designs. The low RDS(on) makes it suitable for high-current applications where efficiency is critical. Consider the thermal resistance characteristics of the SO-8FL package for heat dissipation planning in dense circuit layouts.
Part Context
This part belongs to onsemi's NVMFD series of dual power MOSFETs. It shares the same package outline and automotive qualification standards as other members like the NVMFD040N10MCLT1G, but differs in electrical parameters such as on-resistance and current handling capabilities. It complements single-channel devices by providing two independent switches in one footprint.
Replacement Considerations
Direct substitutes include other onsemi dual N-channel MOSFETs in the SO-8FL package with similar voltage ratings. Verify pinout compatibility and thermal performance when considering alternatives from other manufacturers.
