NVMFWD016N06CT1G

NVMFWD016N06CT1G

$2.70
  • Description:MOSFET 2N-CH 60V 9A 8DFN
  • Series:-

SKU:86590894c145 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 9A 8DFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:9A (Ta), 32A (Tc)
  • Rds On (Max) @ Id, Vgs:16.3mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs:6.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:489pF @ 30V
  • Power - Max:3.1W (Ta), 36W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
  • Grade:Automotive
  • Qualification:AEC-Q101

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NVMFWD016N06CT1G

Overview

The onsemi NVMFWD016N06CT1G is a dual N-channel power MOSFET designed for high-efficiency, space-constrained applications. It features a DUAL SO8FL (SO-8FL-Dual-8) package with dimensions of 5x6 mm and includes solderable side wings to facilitate optical inspection during assembly. The device offers a maximum drain-source voltage (V_DSS) of 60 V and a low on-resistance (R_DS(on)) of 16.3 mΩ at V_GS = 10 V. Continuous drain current (I_D) reaches 32 A at T_C = 25°C and 23 A at T_C = 100°C. It supports a pulse drain current of 128 A at T_A = 25°C with a 10 μs pulse width. Power dissipation is rated at 36 W at T_C = 25°C and 3.1 W at T_A = 25°C. The component operates within a junction temperature range of -55°C to +175°C.

Feature Summary

  • Dual N-channel configuration in a compact 5x6 mm SO-8FL package
  • Low on-resistance (16.3 mΩ) for reduced conduction losses
  • Solderable side wings enhance optical inspection capabilities
  • AEC-Q101 qualified with PPAP capability for automotive reliability

Applications

  • Electric tools and battery-powered vacuum cleaners
  • Unmanned aerial vehicles (UAVs) and flight controllers
  • Material handling equipment motor drives
  • Battery management systems (BMS) and energy storage
  • Home automation and smart appliance power control

Procurement Notes

Verify the specific suffix 'T1G' indicates tape-and-reel packaging with a standard quantity of 1500 units per reel. Confirm that the 'W' in the base part number corresponds to the solderable side wing variant, which is distinct from the standard NVMFD016N06C. Ensure compliance requirements such as RoHS, Pb-Free, and Halogen-Free status are documented in the official datasheet for your region's regulatory needs.

Selection Notes

Select this component when dual-channel isolation is required within a minimal footprint. The 60V rating suits low-voltage DC systems, while the 16.3 mΩ R_DS(on) minimizes thermal generation under high load. The AEC-Q101 qualification makes it suitable for automotive environments where long-term reliability and production part approval process (PPAP) documentation are mandatory. Compare thermal resistance values against your PCB copper area to ensure adequate heat dissipation.

Part Context

This device belongs to onsemi’s NVMF series of 60V single and dual N-channel MOSFETs. It shares the same core silicon technology and electrical characteristics as the NVMFD016N06C but distinguishes itself through the inclusion of solderable side wings. This variant is engineered for automated surface-mount assembly lines requiring enhanced visual inspection accuracy without altering the functional performance or pinout of the standard dual MOSFET.

Replacement Considerations

The NVMFD016N06C serves as the direct non-side-wing equivalent. For single-channel applications requiring identical electrical specs, the NVMFS016N06C is a compatible alternative. Verify that any substitute maintains the 60V V_DSS, 16.3 mΩ max R_DS(on), and SO-8FL package compatibility to ensure mechanical and electrical interchangeability.

NVMFWD016N06CT1GNVMFWD016N06CT1G
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