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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 7A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta), 19A (Tc)
- Rds On (Max) @ Id, Vgs：29.7mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：4V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs：4.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：255pF @ 30V
- Power - Max：3.2W (Ta), 23W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The NVMFWD030N06CT1G is a dual N-channel power MOSFET from onsemi, housed in a DFN8 5x6 mm (SO-8FL Dual) package. It features a drain-to-source voltage of 60 V and a maximum continuous drain current of 19 A at TC = 25 °C. The device exhibits a maximum on-resistance of 29.7 mΩ at VGS = 10 V and ID = 3 A. Key electrical parameters include a total gate charge of 4.7 nC and a pulsed drain current capability of 63 A. Thermal resistance ratings are 6.3 °C/W junction-to-case and 46.6 °C/W junction-to-ambient. The component operates within a temperature range of -55 °C to +175 °C.
Feature Summary
- Wettable flank option for enhanced optical inspection
- AEC-Q101 qualified and PPAP capable
- Small footprint design for compact applications
Applications
- Power tools
- Battery operated vacuums
- UAV/Drones
- Material handling
- BMS/Storage
- Home automation
Procurement Notes
Verify the specific ordering suffix 'T1G' corresponds to the tape and reel packaging configuration containing 1500 units per reel. Confirm that the wettable flank variant is required for automated optical inspection processes. Ensure compliance with Pb-Free, Halogen Free, and BFR Free standards as specified in the datasheet documentation.
Selection Notes
Select this component when a dual N-channel configuration is required in a 5x6 mm footprint. The 60 V rating and 19 A current capacity suit low-voltage power switching applications. Verify thermal management requirements against the 6.3 °C/W junction-to-case resistance for steady-state operation.
Part Context
This part belongs to the NVMFD030N06C series of dual N-channel MOSFETs. The NVMFWD030N06CT1G specifically denotes the version with wettable flanks, distinguishing it from the standard NVMFD030N06CT1G. Both share identical electrical characteristics and package dimensions.
Replacement Considerations
Direct substitutes within the same family include the NVMFD030N06CT1G (standard flanks). Cross-family replacements require matching the 60 V rating, dual channel topology, and SO-8FL-Dual package constraints.
