NVMFWS6D2N08XT1G

$1.34

Description：T10 80V STD NCH MOSFET SO8FL PRE
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:619f209b39c7 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

NVMFWS6D2N08XT1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is T10 80V STD NCH MOSFET SO8FL PRE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NVMFWS6D2N08XT1G

Description：T10 80V STD NCH MOSFET SO8FL PRE
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：71A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：6.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：3.6V @ 75µA
Gate Charge (Qg) (Max) @ Vgs：19 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1330 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：68W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：5-DFNW (4.9x5.9) (8-SOFL-WF)
Package / Case：8-PowerTDFN, 5 Leads

Single FETs, MOSFETs datasheet and documents for NVMFWS6D2N08XT1G

NVMFWS6D2N08XT1G

Single FETs, MOSFETs Overview

The NVMFWS6D2N08XT1G is a single N-channel Power MOSFET from onsemi, rated for an 80 V drain-to-source voltage and a continuous drain current of 71 A at 25°C. It features a low on-resistance of 6.2 mΩ at 10 V gate drive and utilizes the DFNW5 (SO-8FL) surface-mount package. The device is AEC-Q101 qualified and PPAP capable, designed for automotive applications including 48 V systems, synchronous rectification in DC-DC converters, primary switching in isolated converters, and motor drives.

Single FETs, MOSFETs Feature Summary

Low reverse recovery charge and soft recovery body diode to minimize switching losses
Optimized low RDS(on) to reduce conduction losses
Reduced gate charge and capacitance to lower driver power consumption
AEC-Q101 qualification with PPAP capability for automotive reliability

Single FETs, MOSFETs Applications

Synchronous Rectification (SR) in DC-DC and AC-DC converters
Primary Switching in Isolated DC-DC Converters
Motor Drive Systems
Automotive 48 V Electrical Systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'T1G' corresponds to the tape and reel shipping configuration containing 1500 units per reel. Confirm that the component meets RoHS compliance standards and is free from halogens and brominated flame retardants as specified in the manufacturer documentation. Ensure compatibility with the DFNW5 footprint dimensions during PCB layout.

Single FETs, MOSFETs Selection Notes

Select this component when an 80 V rating and high current handling up to 71 A are required in a compact surface-mount form factor. Consider the thermal resistance values provided for junction-to-case and junction-to-ambient environments to ensure adequate heat dissipation. Evaluate the gate charge requirements against the available driver capability to optimize switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the NVMFWS series of standard gate N-channel MOSFETs manufactured by onsemi. It is housed in the DFNW5 package, also referred to as SO-8FL, which provides a small footprint suitable for space-constrained designs. The device is engineered to balance low conduction and switching losses for efficient power management.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists or cross-reference tools for verified alternatives within the same voltage and current class. Ensure any replacement maintains the DFNW5 package outline and meets the same AEC-Q101 automotive qualification standards.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current for this device?

The maximum pulsed drain current is 265 A for a pulse duration of 100 µs.

Is the body diode characterized for fast switching applications?

Yes, the device features a low reverse recovery charge (QRR) of 88 nC and a soft recovery characteristic, making it suitable for high-frequency switching.