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Product Detailed Parameters
- Description：MOSFET N-CH 60V LFPAK56
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The onsemi NVMJD016N06CTWG is a dual N-channel PowerTrench MOSFET designed for high-efficiency power switching applications. It features a compact SO-8FL (5x6 mm) surface-mount package, enabling significant board space reduction in dense layouts. The device offers a maximum drain-source voltage of 60V and a low on-resistance of 16.3mΩ at VGS=10V, ensuring minimal conduction losses. With a continuous drain current rating of 32A at TC=25°C and an operating junction temperature range up to 175°C, it provides robust performance for automotive and industrial environments.
Feature Summary
- Dual N-channel configuration within a single compact 5x6mm SO-8FL package for space-constrained designs
- Low on-resistance minimizes conduction losses and thermal generation during operation
- Optimized gate charge characteristics reduce switching losses and drive circuit requirements
- Automotive-grade reliability with AEC-Q101 qualification and PPAP capability
Applications
- Automotive battery management systems and power distribution units
- DC-DC converters and point-of-load regulation modules
- Motor control circuits for electric power steering and pumps
- Industrial motor drives and solenoid switching applications
Procurement Notes
Verify the specific suffix 'TWG' against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications and environmental compliance status. Ensure the ordering part number matches the exact pinout and electrical parameters required for the target design. Cross-reference with authorized distributors to confirm current availability and authenticity before procurement.
Selection Notes
Select this component when dual-channel isolation or synchronized switching is required within a limited footprint. Evaluate the thermal resistance values against the expected ambient temperature and heat sinking capabilities to ensure the junction temperature remains within safe operating limits under peak load conditions.
Part Context
This device belongs to onsemi's PowerTrench family of N-channel MOSFETs, which are engineered for low on-resistance and fast switching speeds. The dual-channel architecture allows for efficient half-bridge or synchronous rectifier configurations without increasing the PCB area compared to single-channel alternatives.
Replacement Considerations
Direct replacements must match the 60V rating, dual N-channel topology, and SO-8FL package dimensions. Verify that substitute components meet or exceed the 16.3mΩ RDS(on) specification and maintain AEC-Q101 automotive qualification if used in regulated vehicle applications.
