NVMJD027N06CLTWG

NVMJD027N06CLTWG

  • Description:MOSFET 2N-CH 60V 7.7A 8LFPAK
  • Series:-

SKU:04289852c685 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 7.7A 8LFPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:-
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:7.7A (Ta), 21A (Tc)
  • Rds On (Max) @ Id, Vgs:27mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 13µA
  • Gate Charge (Qg) (Max) @ Vgs:5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:335pF @ 30V
  • Power - Max:3.2W (Ta), 24W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1205, 8-LFPAK56
  • Supplier Device Package:8-LFPAK
  • Grade:Automotive
  • Qualification:AEC-Q101

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NVMJD027N06CLTWG

Overview

The NVMJD027N06CLTWG is a dual N-channel MOSFET from onsemi, housed in an LFPAK8 (5 x 6 mm) surface-mount package. It features a drain-to-source voltage of 60 V and a continuous drain current of 21 A at TC = 25°C. The device exhibits a low on-resistance of 27 mΩ at VGS = 10 V and 41 mΩ at VGS = 4.5 V. Total gate charge is 5 nC at VGS = 10 V and VDS = 48 V. Thermal resistance from junction to case is 6.28 °C/W. Operating temperature ranges from -55°C to +175°C.

Feature Summary

  • Dual N-Channel configuration within a compact 5 x 6 mm footprint for space-constrained designs.
  • Low RDS(on) characteristics minimize conduction losses across standard gate drive voltages.
  • Low capacitance values reduce driver power consumption and switching energy requirements.
  • Qualified under AEC-Q101 standards with PPAP capability for automotive reliability.

Applications

  • Automotive power distribution systems requiring high reliability.
  • Compact DC-DC converter topologies utilizing small form factor components.
  • Motor control circuits where dual channel integration reduces board area.

Procurement Notes

Verify the specific ordering suffix TWG corresponds to the 3000-unit tape and reel packaging format. Confirm that the component meets RoHS compliance and lead-free manufacturing standards required by the target assembly process. Ensure the LFPAK8 thermal pad dimensions align with the printed circuit board copper pour specifications for optimal heat dissipation.

Selection Notes

Select this component when a dual N-channel topology is necessary within strict spatial limits. Evaluate the 27 mΩ on-resistance against the maximum allowable conduction loss at the intended operating current. Verify that the 60 V breakdown voltage provides sufficient margin for the system's peak transient voltage conditions.

Part Context

This part belongs to the NVMJD027N06CL series of low-voltage power MOSFETs. It utilizes silicon technology optimized for automotive applications. The LFPAK8 package provides enhanced thermal performance compared to traditional SOT packages while maintaining a small outline suitable for automated surface mount assembly processes.

Replacement Considerations

Direct substitutes must match the 60 V rating, dual N-channel configuration, and LFPAK8 footprint. Verify pinout compatibility between D1/S1/G1 and D2/S2/G2 arrangements. Ensure equivalent thermal resistance and electrical parameters to maintain circuit stability without redesigning the layout or gate drive network.

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