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Product Detailed Parameters
- Description：MOSFET N-CH 40V LFPAK56
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The NVMJD5D4N04CTWG is a dual N-channel power MOSFET from onsemi, housed in an LFPAK8 (CASE 760AF) package with a 5x6 mm footprint. It features a drain-to-source voltage of 40 V and a maximum continuous drain current of 69 A at TC = 25°C. The device exhibits a low on-resistance of 5.8 mΩ at VGS = 10 V and ID = 30 A. Key electrical parameters include a total gate charge of 14 nC, input capacitance of 969 pF, and turn-on delay time of 9.1 ns. It operates within a junction temperature range of -55°C to +175°C and meets AEC-Q101 qualification standards.
Feature Summary
- Dual configuration in a compact 5x6 mm LFPAK8 package for space-constrained designs
- Low on-resistance minimizes conduction losses during operation
- Reduced gate charge and capacitance lower driver circuit losses
- AEC-Q101 qualified and PPAP capable for automotive reliability
Applications
- Automotive power distribution systems
- High-current DC-DC converter modules
- Motor control applications requiring dual channel switching
Procurement Notes
Verify the specific ordering suffix 'TWG' against official documentation to confirm tape and reel packaging specifications and lead times. Ensure compatibility with standard LFPAK8 footprints during PCB layout. Confirm RoHS compliance and Pb-free status requirements for the target assembly process before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel topology is required within a 5x6 mm envelope. Evaluate thermal resistance values based on actual PCB copper area and airflow conditions rather than datasheet nominal figures. Verify that the 40 V rating provides sufficient margin for transient voltages in the specific application environment.
Part Context
This part belongs to onsemi's NVMJD series of dual N-channel MOSFETs designed for high-efficiency power management. The LFPAK8 package offers improved thermal performance compared to traditional surface-mount packages. It serves as a direct replacement for legacy dual MOSFET solutions requiring similar voltage and current ratings in automotive and industrial sectors.
Replacement Considerations
Check for pin-compatible alternatives within the same LFPAK8 family if supply constraints exist. Verify that substitute devices meet or exceed the 5.8 mΩ on-resistance and 69 A current handling capabilities. Ensure any replacement maintains AEC-Q101 qualification if used in automotive contexts.
