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Product Detailed Parameters
- Description：MOSFET N-CH 40V LFPAK56
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The NVMJD7D4N04CLTWG is a dual N-channel power MOSFET manufactured by onsemi, rated for a drain-source voltage of 40V. It features a low on-resistance (RDS(on)) ranging from 6.5mΩ to 7.6mΩ at VGS=10V and ID=13A, enabling efficient power switching with minimal conduction losses. The device supports a continuous drain current of 51A at Tc=25°C and is housed in a compact 5x6mm LFPAK-4 package. Designed for automotive reliability, it holds AEC-Q101 qualification and PPAP capability, operating within a junction temperature range of -55°C to +175°C.
Feature Summary
- Dual channel configuration integrated into a single compact LFPAK-4 package for space-constrained designs
- Low on-resistance characteristics to minimize conduction losses and improve system efficiency
- Automotive-grade reliability certified under AEC-Q101 standards with PPAP capability
- Enhanced thermal performance and mechanical stability suitable for harsh operating environments
Applications
- Automotive power distribution systems requiring high reliability
- Compact motor driver circuits for electric power steering or pumps
- High-efficiency DC-DC converter topologies in vehicle electronics
Procurement Notes
Verify the specific ordering suffix against official onsemi documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets the required AEC-Q101 qualification level for your target application. Cross-reference the datasheet revision date to ensure compatibility with your design constraints. Ensure storage conditions adhere to moisture sensitivity levels specified in the manufacturing data.
Selection Notes
Select this component when a dual N-channel configuration is required in a small footprint to save board space. Evaluate the RDS(on) values at your specific gate drive voltage to ensure acceptable conduction losses. Consider the thermal resistance of the LFPAK-4 package relative to your PCB copper area for adequate heat dissipation. Verify that the 40V rating provides sufficient margin for your system's maximum supply voltage transients.
Part Context
This part belongs to onsemi's NVMJD series of automotive-grade dual MOSFETs. The series is engineered for high-current applications where size reduction and thermal efficiency are critical. The 'CL' suffix typically denotes specific lead-free and RoHS-compliant packaging variants within the product line.
Replacement Considerations
Direct replacements must match the dual N-channel topology, 40V rating, and LFPAK-4 package dimensions. Verify equivalent RDS(on) and current handling capabilities. Check for compatible pinout configurations to ensure PCB layout compatibility without redesign.
