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NVTFS5811NLTWG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 40V 16A 8WDFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NVTFS5811NLTWG
- Description：MOSFET N-CH 40V 16A 8WDFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：16A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1570 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 21W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：8-WDFN (3.3x3.3)
- Package / Case：8-PowerWDFN
Single FETs, MOSFETs datasheet and documents for NVTFS5811NLTWG
Single FETs, MOSFETs Overview
The NVTFS5811NLTWG is a single N-channel enhancement mode Power MOSFET manufactured by onsemi. It features a maximum drain-source voltage (Vds) of 40 V and a continuous drain current (Id) of 40 A at 25°C. The device offers a low on-resistance (Rds(on)) of 6.7 mΩ at Vgs = 10 V and 10 mΩ at Vgs = 4.5 V. Packaged in an 8-pin WDFN (3.3 x 3.3 mm) surface-mount format, it supports a maximum power dissipation of 21 W and operates within a junction temperature range of -55 °C to +175 °C.
Single FETs, MOSFETs Feature Summary
- Low RDS(on) minimizes conduction losses for improved efficiency
- Small footprint design enables compact PCB layouts
- Low capacitance reduces driver switching losses
- AEC-Q101 qualified and PPAP capable for automotive reliability
Single FETs, MOSFETs Applications
- Automotive power distribution systems
- DC-DC converter stages
- Motor control applications
- Load switch implementations
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix against official datasheets to confirm package variations such as wettable flanks or tape-and-reel configurations. Ensure component authenticity through authorized channels. Confirm RoHS compliance and lead-free status requirements match project specifications before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when a 40 V rating and high current capacity are required in a minimal board area. Evaluate thermal management needs based on the 21 W dissipation limit. Consider gate threshold voltage characteristics for logic compatibility. Verify that the WDFN package suitability aligns with available assembly equipment and soldering profiles.
Single FETs, MOSFETs Part Context
This part belongs to onsemi’s NVTFS series of automotive-grade MOSFETs designed for high-density power applications. The series emphasizes low resistance and robust packaging solutions suitable for demanding environments. The NVTFS5811NLTWG specifically targets designs requiring efficient power switching within constrained physical spaces.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference guides for verified substitutes. Ensure replacement parts maintain identical voltage, current, and package dimensions. Verify electrical parameter equivalence to prevent circuit performance degradation.
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