NVTFWS1D9N04XMTAG

Single FETs, MOSFETs Overview

The NVTFWS1D9N04XMTAG is a single N-channel power MOSFET manufactured by onsemi. It features a DFNW-5 surface-mount package and utilizes silicon technology. Key electrical parameters include a drain-source breakdown voltage (Vds) of 40 V, a continuous drain current (Id) of 141 A, and a maximum drain-source on-resistance (Rds On) of 1.9 mOhms. The device supports a gate-source voltage (Vgs) of 20 V with a threshold voltage (Vgs th) of 3.5 V. Gate charge (Qg) is specified at 15.7 nC. Operating temperatures range from -55 C to +175 C, with a power dissipation (Pd) of 50 W.

Single FETs, MOSFETs Feature Summary

• Single N-channel configuration in a compact DFNW-5 flat lead package
• High thermal performance suitable for space-constrained designs
• Optimized for automotive applications requiring robust reliability

Single FETs, MOSFETs Applications

• Automotive power management systems
• Compact efficient electronic designs
• Industrial motor drive circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to ensure correct packaging and tape specifications. Confirm RoHS compliance status through the manufacturer's datasheet or certification documents before procurement. Ensure the component matches the required DFNW-5 footprint and pinout for PCB integration.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling in a small form factor. The low on-resistance minimizes conduction losses, while the wide operating temperature range ensures stability in harsh environments. Verify that the 40V rating aligns with system voltage requirements and that the thermal design accommodates the specified power dissipation limits.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's automotive-grade power MOSFET portfolio, designed for high-reliability applications. The DFNW-5 package provides enhanced thermal conductivity compared to traditional packages, supporting efficient heat dissipation in dense circuit layouts. It complements other low-voltage MOSFETs in the series for scalable power solutions.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the same family, such as NVTFWS2D9N04XMT1G, noting differences in Rds On and current ratings. Ensure any replacement maintains the DFNW-5 package outline and pin configuration for board compatibility.