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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.25A SC88
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：250mA
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：1.3nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：33pF @ 5V
- Power - Max：272mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-88/SC70-6/SOT-363
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The NVTJD4001NT2G is a dual N-channel small signal MOSFET in an SC-88 package. It features a drain-to-source voltage of 30 V and a continuous drain current of 250 mA at 25 °C. The device has a maximum power dissipation of 272 mW and operates within a junction temperature range of -55 °C to 150 °C. It includes AEC-Q101 qualification, low gate charge for fast switching, and ESD protected gates.
Feature Summary
- AEC-Q101 qualified for automotive applications
- Low gate charge enables fast switching performance
- ESD protected gates enhance reliability
- Small footprint reduces board space requirements
Applications
- Low side load switch
- Li-Ion battery supplied devices such as cell phones, PDAs, and digital still cameras
- Buck converters
- Level shifts
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets all required environmental and safety standards for the intended application before finalizing procurement decisions.
Selection Notes
Select this component for applications requiring compact dual N-channel MOSFETs with automotive qualification. Consider its low gate charge and small footprint when designing space-constrained circuits that demand fast switching capabilities and robust ESD protection.
Part Context
This part belongs to onsemi's family of dual N-channel small signal MOSFETs. It shares core electrical characteristics with the NTJD4001N but includes additional automotive qualification. The device is designed for portable electronics and power management applications where size and efficiency are critical.
Replacement Considerations
Check datasheet for compatible substitutes like NTJD4001NT1G or NSTJD4001NT1G. Verify pinout compatibility and electrical ratings match before substitution.
FAQ
Is the NVTJD4001NT2G suitable for automotive applications?
Yes, it is AEC-Q101 qualified.
What is the maximum drain-to-source voltage?
The maximum rating is 30 V.
Does the device have ESD protection?
Yes, the gates are ESD protected.
