NVVR21A65M2WSB

Overview

The NVVR21A65M2WSB is a Silicon Carbide (SiC) MOSFET array manufactured by onsemi. It features a 1200V drain-source voltage rating and utilizes the AHPM15-CDE through-hole package. This component belongs to the discrete semiconductor category, specifically within the FET and MOSFET arrays segment.

Feature Summary

• Utilizes Silicon Carbide (SiC) technology for high-performance switching
• Configured as a dual MOSFET array in a single package
• Designed for robust operation with a 1200V breakdown voltage

Applications

• High-voltage power conversion systems
• Industrial motor drives
• Electric vehicle charging infrastructure

Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the official onsemi documentation before integration. Confirm that the AHPM15-CDE package dimensions and thermal requirements align with the target PCB layout and cooling strategy. Ensure compliance with relevant RoHS and material composition declarations for the final assembly.

Selection Notes

Select this component when a high-voltage SiC solution is required in a through-hole configuration. The dual-array format simplifies circuit design for half-bridge or synchronous rectification topologies. Consider the thermal management capabilities of the AHPM15-CDE package relative to the expected power dissipation and ambient operating conditions.

Part Context

This part is categorized under onsemi's discrete semiconductors, specifically within the transistor family. It falls into the FET, MOSFET, and MOSFET Arrays sub-segment. The device leverages onsemi's expertise in wide-bandgap materials to provide efficient power switching solutions for demanding applications.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement matches the 1200V rating, SiC technology, and AHPM15-CDE package form factor to maintain system integrity.