NVXK2TR40WXT

Overview

The NVXK2TR40WXT is a Silicon Carbide (SiC) Dual Half-Bridge Power Module from onsemi’s EliteSiC APM32 series, designed for On-Board Charger (OBC) applications in xEVs. It features a 1200 V drain-to-source breakdown voltage and a maximum continuous drain current of 55 A at 25°C case temperature. The module exhibits a typical on-resistance of 40 mΩ at 20 V gate drive and 25°C junction temperature, rising to 71 mΩ at 175°C. With a thermal resistance junction-to-case of 0.37°C/W typ, it supports high-power density designs. The device includes integrated NTC thermistors for thermal monitoring and complies with automotive qualification standards.

Feature Summary

• DIP Silicon Carbide H-Bridge configuration optimized for compact OBC designs
• Automotive qualified per AEC-Q101 and AQG324 standards
• Integrated NTC thermistor pins for precise thermal monitoring
• Compliant with IEC creepage and clearance requirements

Applications

• On-Board Charger (OBC) systems for electric vehicles
• DC-DC converters in xEV powertrains

Procurement Notes

Verify the specific ordering suffix and lot code against the purchase order to ensure correct assembly site and traceability. Confirm that the APM32 package dimensions match the target PCB footprint. Ensure the procurement channel provides valid RoHS and UL94V-0 compliance documentation as specified in the datasheet. Check for any recent revision updates to the data sheet that may affect mechanical or electrical specifications.

Selection Notes

Select this module when designing SiC-based OBCs requiring high efficiency and thermal performance. The 1200 V rating provides sufficient headroom for 800 V battery architectures. Consider the 55 A continuous current limit and thermal resistance values for heatsink sizing. The dual half-bridge topology allows for flexible phase configurations. Verify gate drive voltage compatibility with the recommended +20/-5 V operating range.

Part Context

This component belongs to onsemi’s EliteSiC APM32 series of automotive-grade SiC modules. It utilizes the MODHL case outline, which is standardized for this family. The part integrates four SiC MOSFETs into a single DIP package, replacing discrete solutions. It is manufactured by Semiconductor Components Industries, LLC dba onsemi.

Replacement Considerations

No direct public substitute part numbers are listed in the official documentation. Designers should consult onsemi technical support for cross-reference options if pinout or parameter mismatches occur. Ensure any alternative maintains the same APM32 form factor and AEC-Q101 qualification status.