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Product Detailed Parameters
- Description：MOSFET 4N-CH 1200V 20A APM32
- Series：-
- Mfr：onsemi
- Package：Tube
- Technology：Silicon Carbide (SiC)
- Configuration：4 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Rds On (Max) @ Id, Vgs：116mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id：4.3V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs：56nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：1154pF @ 800V
- Power - Max：82W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：32-PowerDIP Module (1.311", 33.30mm)
- Supplier Device Package：APM32
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The NVXK2TR80WDT is a Silicon Carbide (SiC) Dual Half-Bridge Power Module from the EliteSiC APM32 series, designed for xEV applications. It features N-Channel MOSFETs with a Drain-to-Source Voltage of 1200 V and an On-Resistance of 80 mΩ at 25°C. The module supports a continuous drain current of 20 A and dissipates up to 82 W. Operating junction temperatures range from -40°C to 175°C. It includes two integrated Negative Temperature Coefficient (NTC) thermistors for thermal monitoring.
Feature Summary
- DIP SiC H-Bridge configuration optimized for on-board chargers in electric vehicles
- Compliant with IEC 60664-1 and IEC 60950-1 creepage and clearance standards
- Automotive qualified per AEC-Q101 and AQG324 reliability standards
- Integrated discrete NTC thermistors for precise temperature sensing
Applications
- On-board Charger (OBC) systems in xEV applications
- DC-DC converters in electric vehicle powertrains
Procurement Notes
Verify component authenticity by cross-referencing the serial number and lot ID printed on the package against official manufacturer records. Confirm that the marking diagram matches the specific device code NVXK2TR80WDT. Ensure compliance with RoHS and UL94V-0 standards as documented in the datasheet before finalizing procurement.
Selection Notes
Select this module when designing high-efficiency OBC or DC-DC topologies requiring 1200 V blocking capability. The dual half-bridge architecture suits bidirectional charging designs. Verify that the 80 mΩ on-resistance meets thermal constraints for the target 20 A continuous current application within the specified operating temperature range.
Part Context
This component belongs to the EliteSiC APM32 series of automotive-grade silicon carbide modules. It utilizes Al2O3 ceramic substrates for thermal management and offers full traceability through module serialization. The series targets high-power density requirements in modern electric vehicle power electronics.
Replacement Considerations
NVXK2TR40WXT: Offers lower on-resistance (40 mΩ) but reduced continuous current rating (27 A). NVXK2PR80WXT: Features a full-bridge configuration instead of a dual half-bridge topology.
