NVXK2VR80WXT2

Overview

The NVXK2VR80WXT2 is a DIP Silicon Carbide 3-Phase Bridge Power Module designed for on-board chargers in xEV applications. It features a 1200 V drain-to-source voltage and an 80 mΩ maximum on-resistance at 25°C, supporting a continuous drain current of 31 A. The module operates within a junction temperature range of -55°C to 175°C and dissipates up to 208 W. Packaged in the APM32 format with through-hole mounting, it includes integrated NTC thermistors for thermal monitoring. The device meets automotive qualification standards including AEC-Q101 and AQG324.

Feature Summary

• DIP silicon carbide 3-phase bridge power module optimized for on-board charger applications
• Compliant with IEC 60664-1 and IEC 60950-1 creepage and clearance requirements
• Compact design engineered to minimize total module resistance
• Features module serialization for full traceability and reliability tracking

Applications

• PFC for On-Board Charger in xEV Applications

Procurement Notes

Verify component authenticity by checking the marking diagram for specific device codes, lot numbers, assembly sites, year, work week, and serial numbers. Confirm compliance with RoHS and UL94V-0 standards. Ensure the ordering suffix matches the required tube packaging quantity of 10 units per tube. Validate that the part number corresponds to the APM32 package type.

Selection Notes

Select this module for high-power density xEV on-board charger designs requiring a 3-phase bridge topology. Consider the 1200 V rating and 31 A continuous current capability for system sizing. Evaluate the thermal resistance values (RθJC max 0.72 °C/W) against the intended heatsink configuration. Verify compatibility with recommended gate voltages (+20 V/-5 V) and ensure adequate PCB space for the APM32 footprint dimensions.

Part Context

This component belongs to onsemi's EliteSiC series of silicon carbide power modules. It is specifically engineered for electric vehicle (xEV) power electronics, targeting applications like on-board chargers where high efficiency and thermal performance are critical. The module integrates multiple SiC MOSFETs into a single compact package to reduce parasitic inductance and improve switching characteristics compared to discrete solutions.

Replacement Considerations

Direct replacements must match the 1200 V rating, 3-phase bridge configuration, and APM32 package. Verify electrical parameters such as RDS(on), ID, and thermal resistance. Check pinout compatibility, especially for phase outputs and NTC connections. Consult official substitution lists from onsemi for qualified alternatives within the NVXK2 series.