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Product Detailed Parameters
- Description：MOSFET 6N-CH 900V 510A SSDC39
- Series：-
- Mfr：onsemi
- Package：Bulk
- Technology：Silicon Carbide (SiC)
- Configuration：6 N-Channel (3-Phase Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：900V
- Current - Continuous Drain (Id) @ 25°C：510A (Tj)
- Rds On (Max) @ Id, Vgs：2.7mOhm @ 510A, 18V
- Vgs(th) (Max) @ Id：4.3V @ 150mA
- Gate Charge (Qg) (Max) @ Vgs：1800nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds：35000pF @ 400V
- Power - Max：900W (Tj)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：SSDC39
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The NVXR22S90M2SPB is a Silicon Carbide (SiC) power module from onsemi's EliteSiC family, designed for traction inverters. It features a 6-pack configuration with a 900 V drain-to-source voltage and a continuous DC drain current of 510 A at 175°C. The module integrates an optimized pin-fin heatsink in the baseplate for single-side direct cooling. Key electrical parameters include a typical RDS(on) of 2.2 mΩ at 25°C and 3.1 mΩ at 175°C. It operates within a junction temperature range of -40°C to 175°C and includes integrated NTC temperature sensors for each phase.
Feature Summary
- Direct cooling capability via an integrated pin-fin heatsink in the copper baseplate.
- Automotive-grade reliability compliant with AQG324 standards using sintered die technology.
- Six-pack topology with press-fit signal terminals for simplified assembly.
- High-voltage isolation utilizing a silicon nitride (Si3N4) DBC substrate.
Applications
- Hybrid Electric Vehicle (HEV) traction inverters
- Electric Vehicle (EV) traction inverters
Procurement Notes
Verify the specific ordering suffix 'SPB' against the manufacturer's datasheet to confirm terminal plating and packaging details. Ensure that the SSDC39 package dimensions align with the mechanical constraints of the target application. Confirm compliance with RoHS and Pb-free requirements as stated in the product description before finalizing procurement specifications.
Selection Notes
Select this component for high-power density applications requiring single-side cooling. Evaluate the thermal resistance of 0.12°C/W at 10 L/min flow rate against the system's cooling capacity. Consider the 8 nH stray inductance for switching performance optimization. Verify that the gate drive voltage limits (+22 V/-8 V) match the intended driver circuitry capabilities.
Part Context
This module belongs to the EliteSiC Power Module series by onsemi, specifically engineered for automotive traction drives. It represents a generation of SiC MOSFET modules offering improved efficiency and power density compared to previous silicon-based solutions. The SSDC39 package provides a standardized footprint for integration into modern electric vehicle powertrains.
Replacement Considerations
Consult the official onsemi datasheet for qualified replacement part numbers or alternative packages within the EliteSiC family. Verify compatibility of pin assignments and thermal characteristics when substituting with other 6-pack SiC modules.
