NX3008CBKS,115

NX3008CBKS,115

$0.34
  • Description:MOSFET N/P-CH 30V 0.35A 6TSSOP
  • Series:TrenchMOS™

SKU:f07a1e3fb768 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 30V 0.35A 6TSSOP
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:350mA, 200mA
  • Rds On (Max) @ Id, Vgs:1.4Ohm @ 350mA, 4.5V
  • Vgs(th) (Max) @ Id:1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.68nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:50pF @ 15V
  • Power - Max:445mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP
  • Grade:Automotive
  • Qualification:AEC-Q101

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NX3008CBKS,115

Overview

The NX3008CBKS,115 is a complementary N/P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology in a SOT363 (SC-88) plastic surface-mounted package. The N-channel device supports a drain-source voltage of 30 V and a continuous drain current of 350 mA at 25 °C, with a maximum on-state resistance of 1.4 Ω. The P-channel counterpart also features a 30 V rating but provides a continuous drain current of 200 mA, with an on-state resistance ranging from 2.8 Ω to 4.1 Ω. Both channels are qualified under the AEC-Q101 standard for automotive applications.

Feature Summary

  • Complementary N/P-channel configuration in a compact SOT363 package
  • Low threshold voltage enabling efficient logic-level switching
  • Very fast switching performance due to Trench MOSFET technology
  • ESD protection rated up to 2 kV according to Human Body Model standards

Applications

  • Level shifter circuits
  • Power supply converters
  • Load switch implementations
  • General switching circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and marking codes. Confirm that the component meets the required AEC-Q101 qualification status if intended for automotive use. Cross-reference the pinning information with the target PCB footprint design to prevent installation errors during assembly.

Selection Notes

Select this component when a dual-channel solution is required within a minimal surface-mount footprint. The low gate charge characteristics support high-speed operation in signal processing or power management tasks. Ensure the thermal design accommodates the specified junction-to-ambient resistance values under expected operating conditions.

Part Context

This part belongs to the Nexperia TrenchMOS family, designed for general-purpose switching applications. It integrates two independent transistors into a single six-lead package to save board space. The device is suitable for portable electronics and automotive systems requiring reliable low-voltage switching capabilities.

Replacement Considerations

NX3008NBKS,115

FAQ

What is the maximum electrostatic discharge protection rating?

The device offers ESD protection up to 2 kV as per the Human Body Model (HBM) standard.

How does the on-state resistance vary between the N-channel and P-channel?

The N-channel has a maximum RDSon of 1.4 Ω at 350 mA, while the P-channel ranges from 2.8 Ω to 4.1 Ω at 200 mA.

NX3008CBKS,115NX3008CBKS,115
$0.34
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