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The NX3008CBKS,115 is a complementary N/P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology in a SOT363 (SC-88) plastic surface-mounted package. The N-channel device supports a drain-source voltage of 30 V and a continuous drain current of 350 mA at 25 °C, with a maximum on-state resistance of 1.4 Ω. The P-channel counterpart also features a 30 V rating but provides a continuous drain current of 200 mA, with an on-state resistance ranging from 2.8 Ω to 4.1 Ω. Both channels are qualified under the AEC-Q101 standard for automotive applications.
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and marking codes. Confirm that the component meets the required AEC-Q101 qualification status if intended for automotive use. Cross-reference the pinning information with the target PCB footprint design to prevent installation errors during assembly.
Select this component when a dual-channel solution is required within a minimal surface-mount footprint. The low gate charge characteristics support high-speed operation in signal processing or power management tasks. Ensure the thermal design accommodates the specified junction-to-ambient resistance values under expected operating conditions.
This part belongs to the Nexperia TrenchMOS family, designed for general-purpose switching applications. It integrates two independent transistors into a single six-lead package to save board space. The device is suitable for portable electronics and automotive systems requiring reliable low-voltage switching capabilities.
NX3008NBKS,115
The device offers ESD protection up to 2 kV as per the Human Body Model (HBM) standard.
The N-channel has a maximum RDSon of 1.4 Ω at 350 mA, while the P-channel ranges from 2.8 Ω to 4.1 Ω at 200 mA.