NX3008CBKV,115

Overview

The NX3008CBKV,115 is a complementary N/P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology in an SOT666 package. The N-channel device supports a drain-source voltage of 30 V and a continuous drain current of 400 mA at 25 °C, with a typical on-state resistance of 1 Ω. The P-channel counterpart features a -30 V breakdown and -220 mA current capability, exhibiting a typical on-state resistance of 2.8 Ω. Both transistors operate within a junction temperature range of -55 °C to 150 °C.

Feature Summary

• Low threshold voltage for efficient logic-level driving
• Very fast switching performance enabled by Trench MOSFET technology
• Integrated electrostatic discharge protection up to 2 kV

Applications

• Level shifter circuits
• Power supply converters
• Loadswitch applications
• General switching circuits

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when space-constrained designs require a complementary N/P-channel pair in a single ultra-small SOT666 package. It is suitable for low-voltage applications requiring fast switching speeds and integrated ESD protection. Ensure thermal management accounts for the total power dissipation limits across both channels simultaneously.

Part Context

This part belongs to Nexperia's TrenchMOS portfolio, designed for high-density surface-mount applications. The SOT666 package provides a compact footprint with flat leads, facilitating automated assembly in portable electronics and consumer devices where board real estate is limited.

Replacement Considerations

NX3008CBKS,115