NX3008PBKS,115

Overview

The NX3008PBKS,115 is a dual P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology within an SOT363 (SC-88) surface-mounted plastic package. It features a drain-source voltage rating of 30 V and a continuous drain current of 200 mA per transistor. The device exhibits a typical on-state resistance of 4.1 Ω at -4.5 V gate-source voltage and -200 mA drain current. Total power dissipation reaches 445 mW with a junction temperature range spanning from -55 °C to +150 °C. Electrostatic discharge protection is rated up to 2 kV according to the Human Body Model standard.

Feature Summary

• Dual P-channel configuration in a compact SOT363 package
• Trench MOSFET technology for fast switching performance
• Low threshold voltage operation
• AEC-Q101 qualified for automotive reliability

Applications

• Relay driver circuits
• High-speed line drivers
• High-side load switches
• General switching applications

Procurement Notes

Verify the specific ordering suffix matches the required packaging format before purchase. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive systems. Ensure design parameters remain within the absolute maximum ratings defined in the datasheet to prevent permanent damage during operation or handling.

Selection Notes

Select this component for designs requiring dual P-channel control in minimal footprint space. The low threshold voltage supports logic-level driving capabilities. Consider the thermal resistance characteristics when determining heat dissipation needs for high-duty cycle operations. Verify compatibility with the target PCB footprint dimensions for the SOT363 package.

Part Context

This device belongs to Nexperia's portfolio of small-signal MOSFETs designed for space-constrained electronics. The SOT363 package allows for high-density mounting on printed circuit boards. The product utilizes silicon technology optimized for efficient switching with minimal gate charge requirements compared to standard planar devices.

Replacement Considerations

NX3008PBKV

FAQ

What is the maximum electrostatic discharge rating?

The device provides ESD protection up to 2000 V according to the Human Body Model standard.

Is this component suitable for automotive applications?

Yes, the NX3008PBKS is qualified in accordance with the AEC-Q101 standard for discrete semiconductors.

How many channels does this MOSFET contain?

The device contains two independent P-channel enhancement mode transistors within a single package.