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The NX3008PBKV,115 is a dual P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology in an SOT666 package. It features a drain-source voltage of -30 V and a continuous drain current of -220 mA per transistor at 25 °C. The typical on-state resistance is 2.8 Ω at VGS = -4.5 V. Operating junction temperature ranges from -55 °C to +150 °C with total power dissipation up to 500 mW.
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Select this component for designs requiring compact dual P-channel switching solutions. The SOT666 package minimizes board space while maintaining thermal performance suitable for consumer electronics. Ensure gate drive voltages align with the specified -4.5 V operating conditions for optimal on-state resistance characteristics.
This device belongs to Nexperia's portfolio of small-signal MOSFETs designed for portable and battery-powered applications. The SOT666 package represents a lead-frame based surface-mount solution optimized for automated assembly processes in high-volume manufacturing environments.
Direct pin-compatible replacements include the NX3008PBK (single channel) or other Nexperia dual P-channel devices in SOT666 such as the BSS84 series variants if electrical parameters allow.