NX3008PBKV,115

NX3008PBKV,115

$0.37
  • Description:MOSFET 2P-CH 30V 0.22A SOT666
  • Series:TrenchMOS™

SKU:bd48c86d3c09 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 30V 0.22A SOT666
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:220mA
  • Rds On (Max) @ Id, Vgs:4.1Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id:1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.72nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:46pF @ 15V
  • Power - Max:500mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-666
  • Grade:Automotive
  • Qualification:AEC-Q101

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NX3008PBKV,115

Overview

The NX3008PBKV,115 is a dual P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology in an SOT666 package. It features a drain-source voltage of -30 V and a continuous drain current of -220 mA per transistor at 25 °C. The typical on-state resistance is 2.8 Ω at VGS = -4.5 V. Operating junction temperature ranges from -55 °C to +150 °C with total power dissipation up to 500 mW.

Feature Summary

  • Dual P-channel configuration within an ultra-small SOT666 surface-mounted device plastic package
  • Trench MOSFET technology enabling very fast switching speeds and low threshold voltage operation
  • Integrated electrostatic discharge protection rated up to 2 kV

Applications

  • Relay driver circuits
  • High-speed line drivers
  • High-side load switches
  • General switching circuits

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for designs requiring compact dual P-channel switching solutions. The SOT666 package minimizes board space while maintaining thermal performance suitable for consumer electronics. Ensure gate drive voltages align with the specified -4.5 V operating conditions for optimal on-state resistance characteristics.

Part Context

This device belongs to Nexperia's portfolio of small-signal MOSFETs designed for portable and battery-powered applications. The SOT666 package represents a lead-frame based surface-mount solution optimized for automated assembly processes in high-volume manufacturing environments.

Replacement Considerations

Direct pin-compatible replacements include the NX3008PBK (single channel) or other Nexperia dual P-channel devices in SOT666 such as the BSS84 series variants if electrical parameters allow.

NX3008PBKV,115NX3008PBKV,115
$0.37
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