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The Nexperia NX7002AKS is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a compact SOT363 (SC-88) surface-mount package with six leads. The device supports a drain-source voltage of 60 V and a gate-source voltage range of -20 V to +20 V. Each transistor channel provides a continuous drain current of 170 mA at 25 °C, with a typical on-state resistance of 4.5 Ω at VGS = 10 V. Total power dissipation reaches 330 mW per device, while individual channels dissipate up to 220 mW. Operating temperatures span from -55 °C to +150 °C junction temperature.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type and reel specifications. Confirm that the component meets RoHS compliance requirements for your target market. Ensure design-in compatibility with standard SOT363 footprints during PCB layout. Check for any automotive qualification status if intended for vehicle applications, as this product is not explicitly qualified for such use.
Select this component when space-constrained designs require two independent N-channel switches in a minimal footprint. The low on-state resistance facilitates efficient power handling in low-current applications. Verify thermal management capabilities based on the specific PCB copper area and ambient conditions. Consider the ESD protection levels if the circuit environment presents high static discharge risks.
This device belongs to the NX7002AK series of small-signal MOSFETs from Nexperia. It shares core electrical characteristics with single-channel variants like the NX7002AK but integrates two transistors into one package. The SOT363 package allows for higher component density compared to traditional discrete packages, supporting miniaturized electronic designs.
NX7002AKS,115