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Product Detailed Parameters
- Description：MOSFET 2N-CH 1200V 338A 36PIM
- Series：-
- Mfr：onsemi
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：338A (Tc)
- Rds On (Max) @ Id, Vgs：5.5mOhm @ 200A, 18V
- Vgs(th) (Max) @ Id：4.4V @ 120mA
- Gate Charge (Qg) (Max) @ Vgs：876nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：16410pF @ 800V
- Power - Max：1.098W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：36-PIM (56.7x62.8)
- Grade：-
- Qualification：-
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Overview
The NXH004P120M3F2PNG is a Silicon Carbide (SiC) MOSFET half-bridge module from onsemi's EliteSiC M3 series, housed in an F2 package with Si3N4 DBC. It features press-fit pins and includes an integrated thermistor. Key electrical parameters include a drain-source voltage of 1200 V, a continuous drain current of 338 A at Tc=80°C, and a typical Rds(on) of 4.0 mΩ at 25°C. The maximum power dissipation is 1098 W, operating within a junction temperature range of -40°C to 175°C.
Feature Summary
- Utilizes EliteSiC M3 technology for high-performance switching
- Incorporates a silicon nitride (Si3N4) direct bond copper substrate
- Includes an integrated thermistor for thermal monitoring
- Designed with press-fit pin connections for secure mounting
Applications
- Solar Inverters
- Uninterruptible Power Supplies
- Electric Vehicle Charging Stations
- Industrial Power Systems
Procurement Notes
Verify the specific ordering suffix 'PNG' against official documentation to confirm the inclusion of press-fit pins and halide-free compliance. Ensure that the required assembly torque and insertion force specifications for the press-fit pins are strictly followed during installation to maintain reliable mechanical and electrical contact integrity.
Selection Notes
Select this component when a 1200 V half-bridge topology with low conduction losses is required. The 4 mΩ Rds(on) rating supports high-current applications up to 338 A. Verify that the system design accommodates the 1098 W power dissipation capability and utilizes the integrated thermistor for accurate thermal management within the specified operating temperature range.
Part Context
This part belongs to the EliteSiC M3 product line, representing advanced silicon carbide technology. It is designed as a compact power module solution, integrating both high-side and low-side switches into a single unit. The F2 package provides a standardized footprint for efficient integration into various power conversion architectures.
Replacement Considerations
Consult official cross-reference lists or engineering change notices for verified substitutes. Direct replacements must match the 1200 V rating, half-bridge configuration, and F2 package dimensions to ensure compatibility with existing PCB layouts and cooling systems.
