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The NXH006P120M3F2PTHG is a Silicon Carbide (SiC) power module from onsemi's EliteSiC series, featuring a 2-PACK half-bridge topology within an F2 package. It integrates two N-channel SiC MOSFETs and a thermistor on a High Power Substrate Direct Bonded Copper (HPS DBC). The device supports a drain-source voltage of 1200 V with a maximum continuous drain current of 191 A at Tc = 80 °C. Key electrical parameters include a typical RDS(ON) of 5.3 mΩ at 25 °C and a total gate charge of 622 nC. The module utilizes press-fit pins for mounting and includes pre-applied thermal interface material.
Verify the specific ordering suffix against official documentation to confirm the presence of pre-applied thermal interface material. Ensure that the required press-fit tooling matches the PIM36 package specifications. Confirm RoHS compliance requirements align with project standards before finalizing procurement orders.
Select this component when high-frequency switching and low conduction losses are critical for system efficiency. Evaluate the thermal resistance values against the expected ambient conditions and heatsink capabilities. Consider the gate drive requirements, specifically the recommended voltage ranges and external gate resistance values for optimal switching performance.
This part belongs to the NXH006P120M3F2 product family, which offers variations in thermal interface material application. It is designed as a robust solution for high-power density applications requiring reliable operation under demanding thermal and electrical stresses.
NXH006P120M3F2PHG: Identical electrical characteristics but lacks pre-applied thermal interface material. Verify compatibility with existing assembly processes if substituting.