NXH007F120M3F2PTHG

Overview

The NXH007F120M3F2PTHG is a Silicon Carbide (SiC) MOSFET full-bridge power module from onsemi, housed in an F2 package with press-fit pins. It integrates four N-channel SiC M3S MOSFETs and a thermistor on a High Power Substrate (HPS) Direct Bonded Copper (DBC). The device features a drain-source voltage of 1200 V and a typical on-resistance of 7 mΩ at 25°C. Continuous drain current is rated at 149 A at Tc = 80°C. Operating junction temperature ranges from -40°C to 175°C, with a maximum power dissipation of 353 W. The module includes pre-applied thermal interface material.

Feature Summary

• Full-bridge topology integrating four SiC MOSFETs for efficient power conversion
• High Power Substrate (HPS) DBC technology for enhanced thermal performance
• Integrated thermistor for precise junction temperature monitoring
• Press-fit pin configuration with pre-applied thermal interface material

Applications

• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Electric Vehicle Charging Stations
• Industrial Power Systems

Procurement Notes

Verify the specific ordering suffix PTHG confirms the inclusion of pre-applied thermal interface material. Ensure compatibility with the F2 package mechanical dimensions and press-fit assembly requirements. Confirm RoHS compliance and halogen-free status as specified in the datasheet. Validate that the application environment supports the recommended operating junction temperature range of -40°C to 150°C.

Selection Notes

Select this module for applications requiring high efficiency and compact design in full-bridge topologies. The 7 mΩ on-resistance offers low conduction losses compared to higher resistance alternatives. Consider the 149 A continuous current rating against peak load demands. The integrated thermistor simplifies thermal management strategies. Evaluate gate drive requirements based on the recommended +18V/-3V operating range.

Part Context

This component belongs to onsemi's EliteSiC series of silicon carbide modules. It utilizes the M3S MOSFET generation technology. The F2 package provides a standardized form factor for industrial power applications. The HPS DBC substrate distinguishes it from standard ceramic substrates, offering improved thermal cycling reliability.

Replacement Considerations

Direct replacements within the same family include NXH007F120M3F2PTNG, which lacks pre-applied TIM. Other variants like NXH011F120M3F2PTHG offer different on-resistance values. Verify pinout compatibility and thermal characteristics when substituting with other F2 package modules.