NXH008T120M3F2PTHG

Overview

The NXH008T120M3F2PTHG is a Silicon Carbide (SiC) MOSFET module featuring an 8 mΩ M3S device with a 1200 V drain-source voltage rating. It utilizes a T-type Neutral Point Clamped (TNPC) topology within an F2 package equipped with press-fit pins and pre-applied thermal interface material. The module integrates a thermistor for temperature monitoring and employs High Performance Substrate (HPS) Direct Bonded Copper technology. Key electrical parameters include a continuous drain current of 129 A at 80°C case temperature, a maximum power dissipation of 371 W, and a junction temperature range from -40°C to 175°C.

Feature Summary

• Incorporates T-type Neutral Point Clamped (TNPC) topology for improved switching performance
• Utilizes HPS DBC substrate technology for enhanced thermal management
• Includes integrated NTC thermistor for precise junction temperature monitoring
• Features press-fit pin configuration with pre-applied thermal interface material

Applications

• Solar Inverters
• Uninterruptible Power Supplies
• Electric Vehicle Charging Stations
• Industrial Power Systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm physical attributes such as pin type and thermal interface inclusion. Confirm RoHS compliance status and check for any product development notices or discontinuation updates directly from the manufacturer before finalizing procurement plans.

Selection Notes

Evaluate the module's thermal resistance characteristics and maximum power dissipation limits relative to the intended heatsink design. Ensure the gate drive circuitry supports the recommended operating ranges for gate-source voltage and accounts for the total gate charge requirements during switching transitions.

Part Context

This component belongs to onsemi's EliteSiC series of silicon carbide modules. It represents a high-power density solution designed for advanced power conversion applications requiring low conduction losses and high-temperature operation capabilities compared to traditional silicon-based devices.

Replacement Considerations

Direct replacement requires verifying compatibility with TNPC topology requirements and F2 package dimensions. Check if alternative modules offer similar RDS(on) values and thermal properties while maintaining identical pin configurations for seamless integration.