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Product Detailed Parameters
- Description：MOSFET 2N-CH 1200V 114A
- Series：-
- Mfr：onsemi
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Dual) Common Source
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：114A (Tc)
- Rds On (Max) @ Id, Vgs：14mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id：4.3V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs：454nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：4707pF @ 800V
- Power - Max：250W (Tj)
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The NXH010P120MNF1PG is a Silicon Carbide (SiC) MOSFET module from onsemi's EliteSiC series, housed in an F1 package. It integrates a 1200 V half-bridge topology with a nominal on-resistance of 10 mΩ and a built-in NTC thermistor. The device features press-fit pins for mounting and operates within a junction temperature range of -40°C to 150°C. Key electrical characteristics include a drain-source breakdown voltage of 1200 V, continuous drain current of 114 A at Tc=80°C, and maximum power dissipation of 413 W. The module utilizes a copper DBC substrate without pre-applied thermal interface material.
Feature Summary
- Integrates a 1200 V SiC MOSFET half-bridge with a dedicated thermistor for thermal monitoring
- Utilizes press-fit pin technology for secure mechanical connection
- Features a copper Direct Bonded Copper (DBC) substrate
- Designed for high-efficiency switching with low thermal resistance
Applications
- Solar Inverters
- Uninterruptible Power Supplies (UPS)
- Electric Vehicle Charging Stations
- Industrial Power Systems
Procurement Notes
Verify the specific ordering suffix 'PG' corresponds to the required configuration, which indicates press-fit pins with a copper DBC substrate and no pre-applied thermal interface material. Confirm that the assembly site code and date code meet project requirements. Ensure compatibility with the F1 package dimensions and press-fit installation tools during the procurement process.
Selection Notes
Select this component when a 1200 V SiC half-bridge with integrated thermal sensing is required. The 10 mΩ on-resistance supports high-current applications up to 114 A. Verify that the system design accommodates the F1 package outline and press-fit mounting constraints. Consider the operating junction temperature limits and thermal management needs relative to the specified thermal resistance values.
Part Context
This part belongs to the NXH010P120MNF1 family, which includes variants with different substrates and thermal interface options. The 'PG' suffix specifically denotes the version with a copper DBC and no pre-applied TIM. Other family members like NXH010P120MNF1PTG include pre-applied thermal interface material, while PNG variants use a nickel-plated DBC substrate.
Replacement Considerations
Direct replacements within the same family include NXH010P120MNF1PNG, NXH010P120MNF1PTNG, and NXH010P120MNF1PTG. Note that these alternatives differ in substrate plating (nickel vs. copper) and the presence of pre-applied thermal interface material. Ensure mechanical and thermal interface compatibility when substituting.
