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Product Detailed Parameters
- Description：MOSFET 4N-CH 1200V 51A 22PIM
- Series：-
- Mfr：onsemi
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：4 N-Channel (Full Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：51A (Tc)
- Rds On (Max) @ Id, Vgs：30mOhm @ 50A, 20V
- Vgs(th) (Max) @ Id：4.3V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs：213.5nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：2420pF @ 800V
- Power - Max：119W (Tj)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：22-PIM (33.8x42.5)
- Grade：-
- Qualification：-
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Overview
The NXH020F120MNF1PTG is a silicon carbide (SiC) MOSFET module manufactured by onsemi. It features a four-channel N-configuration designed for full-bridge applications. The device supports a drain-source voltage of 1200V and delivers a continuous drain current of 51A at case temperature. Its maximum on-resistance is specified as 30 milliohms at 50A with a gate-source voltage of 20V. The module utilizes a 22-pin PIM package measuring 33.8x42.5mm, suitable for base mounting. Operating temperatures range from -40°C to +175°C TJ, with a maximum power dissipation of 119W.
Feature Summary
- Utilizes silicon carbide technology for high-temperature operation up to 175°C junction temperature.
- Integrates four N-channel MOSFETs in a single package configured for full-bridge topologies.
- Features a low on-resistance design to minimize conduction losses in power conversion circuits.
Applications
- High-frequency DC-DC converters
- Induction heating systems
- Uninterruptible power supplies
Procurement Notes
Verify the specific suffix against official documentation to confirm packaging variations. Confirm RoHS compliance status through authorized channels. Ensure thermal interface materials match the module's mounting requirements. Validate pin compatibility with existing PCB layouts before integration.
Selection Notes
Select this component for applications requiring high voltage blocking and robust thermal performance. Evaluate the 30 milliohm resistance against system efficiency targets. Consider the 22-pin footprint when designing mechanical constraints. Verify gate charge specifications for driver capability assessment.
Part Context
This part belongs to the NXH020 series of SiC MOSFET modules. It shares the core die architecture with variants like the NXH020F120MNF1PG, differing primarily in packaging format. The series targets industrial power electronics demanding high reliability.
Replacement Considerations
NXH020F120MNF1PG serves as a parameter-equivalent alternative within the same product family. Verify package differences between tray and tube configurations before substitution.
