NXH030F120M3F1PTG

$59.76

Description：MOSFET 4N-CH 1200V 38A 22PIM
Series：-

SKU:8b12b3bc5b03 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET 4N-CH 1200V 38A 22PIM
Series：-
Mfr：onsemi
Package：Tray
Technology：Silicon Carbide (SiC)
Configuration：4 N-Channel (Full Bridge)
FET Feature：Depletion Mode
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：38A (Tc)
Rds On (Max) @ Id, Vgs：38.5mOhm @ 30A, 18V
Vgs(th) (Max) @ Id：4.4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs：110nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds：2246pF @ 800V
Power - Max：100W (Tj)
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：22-PIM (33.8x42.5)
Grade：-
Qualification：-

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NXH030F120M3F1PTG

Overview

The NXH030F120M3F1PTG is a Silicon Carbide (SiC) power module featuring a 4-pack full-bridge topology with 30 mΩ M3S MOSFETs rated at 1200 V. It utilizes an Al2O3 DBC substrate and includes an integrated thermistor for thermal monitoring. The device employs press-fit pins with pre-applied thermal interface material within an F1 package (Case 180HL). Key electrical parameters include a continuous drain current of 38 A at Tc=80°C, a maximum junction temperature of 175°C, and a typical RDS(on) of 30.6 mΩ at 25°C. Gate drive recommendations specify +18 V/-3 V.

Feature Summary

Integrated 4-pack SiC full-bridge configuration with Kelvin source connections for optimized switching performance.
Built-in NTC thermistor on the Al2O3 ceramic substrate for precise junction temperature monitoring.
Press-fit termination technology combined with pre-applied thermal interface material to simplify assembly and improve thermal contact.

Applications

Solar inverters
Uninterruptible power supplies (UPS)
Electric vehicle charging stations
Industrial power systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm pin configuration and thermal interface material inclusion. Ensure that the selected variant matches the required mounting style and packaging quantity specifications for the intended production run.

Selection Notes

Select this component based on the required 1200 V blocking voltage and 30 mΩ on-resistance for high-efficiency full-bridge applications. Evaluate the thermal resistance characteristics and operating temperature range to ensure compatibility with the system's cooling infrastructure and environmental constraints.

Part Context

This part belongs to the EliteSiC M3S series from onsemi, designed for high-power density applications. It represents a generation of silicon carbide modules offering improved switching speeds and reduced conduction losses compared to previous technologies, suitable for demanding power conversion environments.

Replacement Considerations

Consult the official datasheet for direct substitute part numbers or alternative packages within the same product family. Verify pinout compatibility and thermal performance metrics before considering any cross-references to ensure system integrity.