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Product Detailed Parameters
- Description：MOSFET 2N-CH 1200V 42A
- Series：-
- Mfr：onsemi
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：42A (Tc)
- Rds On (Max) @ Id, Vgs：38.5mOhm @ 30A, 18V
- Vgs(th) (Max) @ Id：4.4V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs：110nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds：2271pF @ 800V
- Power - Max：100W (Tj)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The NXH030P120M3F1PTG is a Silicon Carbide (SiC) MOSFET half-bridge module in an F1 package. It features a 1200 V drain-source voltage and a typical on-resistance of 30.6 mΩ at 25°C. The continuous drain current is 42 A at Tc = 80°C, with a pulsed current capability of 117 A. Operating junction temperatures range from -40°C to 175°C. The module includes a thermistor for thermal monitoring and utilizes press-fit pins for mounting.
Feature Summary
- Integrated thermistor for real-time temperature monitoring
- Press-fit pin configuration for secure mechanical connection
- Pre-applied thermal interface material option available
Applications
- Solar Inverter
- Uninterruptible Power Supplies
- Electric Vehicle Charging Stations
- Industrial Power
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the presence or absence of pre-applied thermal interface material. Ensure that the assembly and test site code matches the required manufacturing origin. Confirm compliance with RoHS standards and halogen-free requirements before finalizing procurement specifications.
Selection Notes
Select this component based on its 1200 V blocking capability and 30 mΩ on-resistance characteristics suitable for high-frequency switching applications. Evaluate the thermal resistance values and maximum power dissipation limits relative to the intended heatsinking strategy. Consider the operating temperature range and gate drive requirements when designing the control circuitry.
Part Context
This part belongs to the EliteSiC M3S series of silicon carbide modules from onsemi. It is designed as a compact power solution utilizing advanced SiC technology for improved efficiency compared to traditional silicon devices. The F1 package provides a standardized form factor for integration into various power conversion systems.
Replacement Considerations
NXH010P120M3F1PTG
FAQ
What is the nominal resistance of the integrated thermistor at 25°C?
The nominal resistance of the thermistor at 25°C is 5 kΩ.
What are the recommended gate-source voltage limits?
The recommended gate-source voltage range is +22 V for the positive limit and -10 V for the negative limit.
Does the module include a body diode?
Yes, the module contains a SiC MOSFET which inherently includes a body diode, characterized by a forward voltage of approximately 4.67 V at 25°C and 30 A.
