NXH040P120MNF1PTG

$90.55

Description：MOSFET 2N-CH 1200V 30A
Series：-

SKU:ad2d6b06ff52 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 1200V 30A
Series：-
Mfr：onsemi
Package：Tray
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Dual) Common Source
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Rds On (Max) @ Id, Vgs：56mOhm @ 25A, 20V
Vgs(th) (Max) @ Id：4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：122.1nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds：1505pF @ 800V
Power - Max：74W
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

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NXH040P120MNF1PTG

Overview

The NXH040P120MNF1PTG is a Silicon Carbide (SiC) MOSFET half-bridge module from onsemi's EliteSiC series. It features a 1200V reverse voltage rating and a typical on-resistance of 40 mOhm. The device utilizes press-fit installation for secure mounting. Electrical specifications include a gate-source voltage range of -15 V to +25 V. The module operates within a temperature range of -40°C to +150°C. It is packaged in trays with a factory quantity of 28 units per tray.

Feature Summary

Utilizes Silicon Carbide technology for high-temperature stability and low conduction losses.
Configured as a half-bridge topology for efficient power switching applications.
Features press-fit pins for robust mechanical connection without soldering.

Applications

High-efficiency motor drives
Industrial power supplies
Uninterruptible power systems

Procurement Notes

Verify the specific ordering suffix PTG against the manufacturer datasheet to confirm packaging details. Ensure compatibility with press-fit tooling requirements during integration. Cross-reference the EliteSiC series documentation for thermal management guidelines. Confirm RoHS compliance status through official regulatory declarations before procurement.

Selection Notes

Select this component for designs requiring 1200V SiC performance in a half-bridge configuration. Evaluate the 40 mOhm on-resistance against system efficiency targets. Verify that the operating junction temperature remains within the specified -40°C to +150°C range. Ensure the drive circuit supports the -15 V to +25 V gate voltage limits.

Part Context

This part belongs to the NXH040P120MNF1 series, representing onsemi's EliteSiC discrete and power modules. It is categorized under MOSFET modules utilizing Silicon Carbide technology. The product line focuses on high-voltage, high-frequency power conversion solutions.

Replacement Considerations

NXH040P120MNF1PTG serves as the primary identifier. Check for updated suffixes or revised versions within the same EliteSiC family if available. No direct cross-manufacturer substitutes are confirmed in public data.