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The NXH160T120L2Q1PG is a silicon-based IGBT power module from onsemi, designed for high-efficiency power conversion. It features a split T-type neutral point clamped (NPC) three-level inverter topology within a Q1PACK package. The module integrates two 160 A / 1200 V half-bridge IGBTs with reverse diodes, two 120 A / 650 V neutral point rectifiers, two 100 A / 650 V neutral point IGBTs with reverse diodes, and two 60 A / 1200 V half-bridge rectifiers. Key electrical parameters include a collector-emitter saturation voltage of 2.15 V for the 1200 V devices and 1.47 V for the 650 V devices. Switching energies are specified at 4300 µJ for the half-bridge IGBTs and 2560 µJ for the neutral point IGBTs.
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status using official documentation. Ensure storage conditions meet semiconductor handling standards to prevent moisture damage prior to soldering.
Select this module for applications requiring high current density and reduced switching losses. The 1200 V rating suits medium-voltage industrial systems. Evaluate thermal resistance requirements against system cooling capabilities to ensure junction temperatures remain within safe operating limits.
This component belongs to the NXH series of power integrated modules from onsemi. It utilizes advanced silicon IGBT technology optimized for three-level inverter architectures. The Q1PACK form factor provides a compact solution for high-power density designs.
Direct pin-compatible substitutes are not explicitly confirmed in public data. Consider evaluating other NXH series variants with similar current ratings or alternative manufacturers' split T-type NPC modules after verifying electrical parameter compatibility.