NXH160T120L2Q1PG

NXH160T120L2Q1PG

  • Description:POWER INTEGRATED MODULE (PIM), I
  • Series:-

SKU:20195a81854e Category: Brand:

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Product Detailed Parameters

  • Description:POWER INTEGRATED MODULE (PIM), I
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • IGBT Type:Trench Field Stop
  • Configuration:Three Level Inverter
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 160A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):140 A
  • Power - Max:280 W
  • Current - Collector Cutoff (Max):800 µA
  • Input Capacitance (Cies) @ Vce:38164 pF @ 25 V

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NXH160T120L2Q1PG

Overview

The NXH160T120L2Q1PG is a silicon-based IGBT power module from onsemi, designed for high-efficiency power conversion. It features a split T-type neutral point clamped (NPC) three-level inverter topology within a Q1PACK package. The module integrates two 160 A / 1200 V half-bridge IGBTs with reverse diodes, two 120 A / 650 V neutral point rectifiers, two 100 A / 650 V neutral point IGBTs with reverse diodes, and two 60 A / 1200 V half-bridge rectifiers. Key electrical parameters include a collector-emitter saturation voltage of 2.15 V for the 1200 V devices and 1.47 V for the 650 V devices. Switching energies are specified at 4300 µJ for the half-bridge IGBTs and 2560 µJ for the neutral point IGBTs.

Feature Summary

  • Split T-type NPC three-level inverter topology reduces switching losses and improves energy conversion efficiency compared to traditional two-level inverters.
  • Integrated thermal management via baseplate design ensures stable operation under high thermal loads.
  • Includes an embedded negative temperature coefficient thermistor (NTC) for precise thermal monitoring.

Applications

  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • Solar inverters

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status using official documentation. Ensure storage conditions meet semiconductor handling standards to prevent moisture damage prior to soldering.

Selection Notes

Select this module for applications requiring high current density and reduced switching losses. The 1200 V rating suits medium-voltage industrial systems. Evaluate thermal resistance requirements against system cooling capabilities to ensure junction temperatures remain within safe operating limits.

Part Context

This component belongs to the NXH series of power integrated modules from onsemi. It utilizes advanced silicon IGBT technology optimized for three-level inverter architectures. The Q1PACK form factor provides a compact solution for high-power density designs.

Replacement Considerations

Direct pin-compatible substitutes are not explicitly confirmed in public data. Consider evaluating other NXH series variants with similar current ratings or alternative manufacturers' split T-type NPC modules after verifying electrical parameter compatibility.

NXH160T120L2Q1PGNXH160T120L2Q1PG

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