NXH200T120H3Q2F2SG

$113.77

Description：80KW GEN-II Q2PACK-200A MODULE
Series：-

SKU:24478cbcc132 Category: IGBT Modules Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：80KW GEN-II Q2PACK-200A MODULE
Series：-
Mfr：onsemi
Package：Tray
IGBT Type：Trench Field Stop
Configuration：Half Bridge
Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 200A
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：56-PIM/Q2PACK (93x47)
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：330 A
Power - Max：679 W
Current - Collector Cutoff (Max)：500 µA
Input Capacitance (Cies) @ Vce：35.615 nF @ 25 V

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NXH200T120H3Q2F2SG

Overview

The NXH200T120H3Q2F2SG is a silicon IGBT module from the NXH200T120H3Q2 series, utilizing EliteSiC branding. It features an 80kW GEN-II Q2PACK-200A configuration with a 1200V collector-emitter voltage rating and 200A continuous collector current. The device employs press-fit installation in a tray package. Key electrical parameters include a maximum power dissipation of 272W and a junction temperature range from -40°C to +175°C. The module integrates field-stop trench IGBT technology for optimized switching performance.

Feature Summary

Utilizes Q2PACK-200A packaging architecture designed for high-power density applications
Integrates EliteSiC branded silicon IGBT technology for enhanced thermal management
Features press-fit termination style to ensure robust mechanical connection

Applications

High-power solar inverters
Industrial motor drives
Uninterruptible power supply systems

Procurement Notes

Verify component authenticity through official onsemi channels or authorized distributors. Confirm datasheet revisions match design requirements. Check RoHS compliance status prior to integration. Ensure storage conditions adhere to moisture sensitivity guidelines. Validate pin compatibility with existing PCB layouts.

Selection Notes

Evaluate thermal resistance characteristics against system cooling capabilities. Compare switching losses with alternative silicon or wide-bandgap devices. Assess mechanical stress limits for press-fit mounting processes. Review gate drive requirements for optimal performance. Consider availability constraints due to restricted regional sales status.

Part Context

This module belongs to the NXH200T120H3Q2 family, representing second-generation Q2PACK designs. It serves as a core power switching element in medium-to-high voltage industrial converters. The series emphasizes reliability and efficiency in renewable energy and traction applications.