NXH240B120H3Q1PG-R

$101.89

Description：PIM Q1 3 CHANNEL IGBT+SIC BOOST
Series：-

SKU:7c748c95c47f Category: IGBT Modules Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：PIM Q1 3 CHANNEL IGBT+SIC BOOST
Series：-
Mfr：onsemi
Package：Tray
IGBT Type：Trench Field Stop
Configuration：Three Level Inverter
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 80A
Input：Standard
NTC Thermistor：Yes
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：32-PIM (71x37.4)
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：68 A
Power - Max：158 W
Current - Collector Cutoff (Max)：400 µA
Input Capacitance (Cies) @ Vce：18.151 nF @ 20 V

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NXH240B120H3Q1PG-R

Overview

The NXH240B120H3Q1PG-R is a Si/SiC hybrid power module from onsemi's EliteSiC series, featuring a three-channel BOOST stage. It integrates Ultra Field Stop IGBTs and Silicon Carbide Diodes to minimize conduction and switching losses. The module supports a collector-emitter voltage of 1200 V with an IGBT continuous current of 68 A at Th=80°C. It includes protection diodes, bypass diodes, and a thermistor for thermal monitoring. Designed for high efficiency, it utilizes press-fit pins in Case 180AX.

Feature Summary

Hybrid architecture combining Ultra Field Stop trench IGBTs with fast-switching SiC boost diodes
Integrated thermal management via built-in NTC thermistor
Low inductive layout design to reduce parasitic effects
Robust mechanical connection using press-fit pin technology

Applications

Solar Inverters
Energy Storage Systems (ESS)

Procurement Notes

Verify the specific ordering suffix '-R' against the manufacturer's official documentation to confirm packaging details, as standard listings may reference blister trays. Ensure compatibility with the Q1 package dimensions and press-fit mounting requirements before procurement. Cross-reference the full part number NXH240B120H3Q1PG-R with the latest datasheet revision to validate electrical characteristics and marking diagrams.

Selection Notes

Select this module for applications requiring high-efficiency boosting stages with integrated IGBT and SiC technologies. Consider the 1200 V rating and 68 A continuous current capability for system design. Evaluate the thermal resistance values and junction temperature limits (-40°C to 150°C) against the intended operating environment. Verify that the press-fit pin configuration matches the PCB or busbar assembly process.

Part Context

This component belongs to the NXH240B120H3Q1 family within onsemi's EliteSiC portfolio. It shares core electrical specifications with variants such as NXH240B120H3Q1PG and NXH240B120H3Q1SG. The primary distinction lies in the terminal type, where the 'P' suffix denotes press-fit pins (Case 180AX), while 'S' indicates solder pins (Case 180BQ). All variants utilize the same internal semiconductor structure.