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The NXH240B120H3Q1PG is a silicon IGBT module from onsemi, designed for high-power industrial applications. It features a 1200V collector-emitter breakdown voltage and a continuous collector current of 240A at 25°C. The device utilizes trench field-stop technology to optimize switching performance and conduction losses. Key electrical parameters include a maximum power dissipation of 680W and a typical saturation voltage of 2.3V at rated conditions. Operating within a junction temperature range of -40°C to +150°C, it is housed in a robust PIM package suitable for baseplate mounting.
Verify the specific suffix PG against official datasheets to confirm packaging type and compliance status. Ensure compatibility with existing thermal interface materials and mounting hardware specifications before procurement. Cross-reference part numbers with authorized distributors to avoid counterfeit components.
Select this module based on its 240A current rating and 1200V blocking capability for medium-to-high power inverters. Evaluate thermal resistance requirements against the system's cooling solution. Consider the gate charge characteristics for driver selection to ensure optimal switching speeds and minimize losses.
This component belongs to the NXH series of IGBT modules, which are engineered for demanding power conversion tasks. The series emphasizes reliability and performance in industrial environments. It complements other onsemi power devices by offering a balanced solution for voltage and current handling in compact form factors.
Direct substitutes may include other NXH series variants with similar voltage and current ratings. Verify pinout compatibility and thermal characteristics when considering alternatives from different manufacturers.