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Product Detailed Parameters
- Description：150KW 110V Q1BOOST SOLDER PIN
- Series：-
- Mfr：onsemi
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Three Level Inverter
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 80A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：32-PIM (71x37.4)
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：92 A
- Power - Max：266 W
- Current - Collector Cutoff (Max)：150 µA
- Input Capacitance (Cies) @ Vce：19.082 nF @ 20 V
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Overview
The NXH240B120H3Q1S1G is a Si/SiC hybrid power module featuring a three-channel boost stage. It integrates Ultra Field Stop IGBTs with Silicon Carbide Schottky diodes to minimize conduction and switching losses. The device operates at 1200 V, delivering a continuous collector current of 92 A at 80°C case temperature. Key electrical parameters include a saturation voltage of 2.7 V max at 25°C and a peak repetitive reverse voltage of 1200 V for all diode components. Thermal resistance from junction to case is specified at 0.263 °C/W for the IGBTs.
Feature Summary
- Hybrid architecture combining EliteSiC trench IGBTs with fast-switching SiC diodes
- Low inductive layout design optimized for high-frequency operation
- Integrated NTC thermistor for precise thermal monitoring
- Supports press-fit or solder pin mounting configurations
Applications
- Solar inverters
- Energy Storage Systems (ESS)
Procurement Notes
Verify the specific ordering suffix 'S1G' corresponds to the Case 180BQ package with solder pins rather than the P1G variant which utilizes press-fit pins. Confirm RoHS compliance status and assembly site codes marked on the component surface. Ensure thermal interface material specifications match the required thermal resistance values provided in the datasheet for proper heat dissipation.
Selection Notes
Select this module when designing three-phase boost converters requiring high efficiency and low switching losses. Evaluate the thermal management requirements against the specified junction-to-case thermal resistance. Consider the maximum operating junction temperature limits for both the IGBTs and the SiC diodes during system sizing.
Part Context
This component belongs to the NXH240B120H3Q1 series of EliteSiC/C0116 hybrid modules. It shares core semiconductor characteristics with the NXH240B120H3Q1P1G, differing primarily in the terminal connection method. The series is designed for high-power density applications demanding superior reliability.
Replacement Considerations
NXH240B120H3Q1P1G
FAQ
What is the difference between the NXH240B120H3Q1S1G and NXH240B120H3Q1P1G?
The primary difference is the package terminal type. The S1G suffix indicates Case 180BQ with solder pins, while the P1G suffix indicates Case 180AX with press-fit pins.
What is the maximum operating junction temperature for the SiC Boost Diodes?
The maximum operating junction temperature for the Silicon Carbide Boost Diodes is 175°C.
Does the module include thermal protection features?
Yes, the module includes an integrated NTC thermistor for thermal monitoring, but it does not contain active electronic over-temperature shutdown circuits within the module itself.
