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The NXH240B120H3Q1S1G is a Si/SiC hybrid power module from onsemi, featuring a three-channel boost stage. It integrates Ultra Field Stop IGBTs with Silicon Carbide Schottky diodes to minimize conduction and switching losses. The device operates at 1200 V with a continuous collector current of 92 A at 80°C case temperature. It includes protection diodes and a thermistor for monitoring. The S1G suffix indicates solder pin termination in the Case 180BQ package.
Verify the specific ordering suffix 'S1G' confirms the solder pin configuration rather than press-fit pins. Ensure compatibility with the Case 180BQ mechanical outline during PCB layout. Confirm RoHS compliance status as indicated by the 'G' suffix in official documentation before finalizing procurement orders.
Select this model when a three-phase boost topology is required within a single compact package. Consider the 1200 V rating for medium-voltage applications. Evaluate the thermal resistance values against your heatsink capabilities. Verify that the 92 A continuous current rating meets the peak load requirements of the target circuit design.
This component belongs to the EliteSiC Q1 BOOST series, designed for high-power density applications. It represents an evolution in hybrid module technology, merging silicon IGBT robustness with silicon carbide speed. The product line targets renewable energy and industrial power conversion sectors requiring superior reliability.
The NXH240B120H3Q1P1G serves as a direct alternative with identical electrical characteristics but utilizes press-fit pins instead of solder pins. Designers must verify mechanical mounting constraints and thermal interface requirements when substituting between the P1G and S1G variants.