NXH240B120H3Q1S1G

NXH240B120H3Q1S1G

$66.80
  • Description:150KW 110V Q1BOOST SOLDER PIN
  • Series:-

SKU:1c2a580014ce Category: Brand:

  
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Product Detailed Parameters

  • Description:150KW 110V Q1BOOST SOLDER PIN
  • Series:-
  • Mfr:onsemi
  • Package:Tray
  • IGBT Type:Trench Field Stop
  • Configuration:Three Level Inverter
  • Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 80A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:32-PIM (71x37.4)
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):92 A
  • Power - Max:266 W
  • Current - Collector Cutoff (Max):150 µA
  • Input Capacitance (Cies) @ Vce:19082 pF @ 20 V

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NXH240B120H3Q1S1G

Overview

The NXH240B120H3Q1S1G is a Si/SiC hybrid power module from onsemi, featuring a three-channel boost stage. It integrates Ultra Field Stop IGBTs with Silicon Carbide Schottky diodes to minimize conduction and switching losses. The device operates at 1200 V with a continuous collector current of 92 A at 80°C case temperature. It includes protection diodes and a thermistor for monitoring. The S1G suffix indicates solder pin termination in the Case 180BQ package.

Feature Summary

  • Hybrid architecture combining trench IGBTs and SiC diodes for high efficiency
  • Integrated thermal management via built-in NTC thermistor
  • Low inductive layout design optimized for high-speed switching
  • Robust insulation properties suitable for industrial environments

Applications

  • Solar inverters
  • Energy Storage Systems (ESS)

Procurement Notes

Verify the specific ordering suffix 'S1G' confirms the solder pin configuration rather than press-fit pins. Ensure compatibility with the Case 180BQ mechanical outline during PCB layout. Confirm RoHS compliance status as indicated by the 'G' suffix in official documentation before finalizing procurement orders.

Selection Notes

Select this model when a three-phase boost topology is required within a single compact package. Consider the 1200 V rating for medium-voltage applications. Evaluate the thermal resistance values against your heatsink capabilities. Verify that the 92 A continuous current rating meets the peak load requirements of the target circuit design.

Part Context

This component belongs to the EliteSiC Q1 BOOST series, designed for high-power density applications. It represents an evolution in hybrid module technology, merging silicon IGBT robustness with silicon carbide speed. The product line targets renewable energy and industrial power conversion sectors requiring superior reliability.

Replacement Considerations

The NXH240B120H3Q1P1G serves as a direct alternative with identical electrical characteristics but utilizes press-fit pins instead of solder pins. Designers must verify mechanical mounting constraints and thermal interface requirements when substituting between the P1G and S1G variants.

NXH240B120H3Q1S1GNXH240B120H3Q1S1G
$66.80
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