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The NXH240B120H3Q1SG is a trench field-stop IGBT module manufactured by onsemi. It features a Q1BOOST configuration with two independent switches housed in a 22-pin PIM package. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 120 A. Maximum power dissipation is rated at 365 W, with a typical saturation voltage of 2.3 V at 50 A. Operating temperatures range from -40°C to 150°C junction temperature.
Verify the specific suffix SG against official datasheets to confirm RoHS compliance and lead-free status. Confirm package outline dimensions match the 22-PIM/Q0BOOST specification before integration. Ensure thermal interface materials are compatible with the baseplate mounting requirements.
Select this component for applications requiring 1200V blocking capability and moderate current handling up to 120A. Compare the 2.3V saturation voltage against system efficiency targets. Verify that the 365W power dissipation rating aligns with the available heatsinking capacity in the final assembly.
This part belongs to the NXH series of IGBT modules designed for industrial power conversion. It utilizes advanced trench gate technology to reduce conduction losses while maintaining robust short-circuit withstand capabilities suitable for demanding drive environments.
NXH240B120H3Q0PG is a documented alternative within the same family. Verify pinout compatibility and electrical parameter differences before substitution.